摘要
硫化亚锡(SnS)是一种Ⅳ-Ⅵ族层状化合物半导体材料,其禁带宽度与太阳能电池最佳带隙1.5 eV非常接近,并且在可见光范围内光的吸收系数很大(α>104 cm-1),因此SnS是一种很有应用前景的材料。本文利用太阳能电池模拟软件wxAMPS模拟了MoS_(2)/SnS异质结太阳能电池,主要研究SnS吸收层的厚度、掺杂浓度和缺陷态等因素对太阳能电池性能的影响。研究发现:SnS吸收层最佳厚度为2μm,最佳掺杂浓度为1.0×10^(15) cm^(-3);同时高斯缺陷态浓度超过1.0×10^(15) cm^(-3)时,电池各项性能参数随着浓度的增加而减小,而带尾缺陷态超过1.0×10^(19) cm^(-3)·eV-1时,电池性能才开始下降;其中界面缺陷态对太阳能电池影响比较严重,界面缺陷态浓度超过1.0×10^(12) cm^(-2)时,开路电压、短路电流、填充因子和转换效率迅速下降。另外,通过模拟获得的转换效率高达24.87%,开路电压为0.88 V,短路电流为33.4 mA/cm 2。由此可知,MoS_(2)/SnS异质结太阳能电池是一种很有发展潜力的光伏器件结构。
Stannous sulfide(SnS)is a classⅣ-Ⅵlayered compound semiconductor material.It’s band gap is very close to the optimal band gap of 1.5 eV for solar cells,and the light absorption coefficient is very large(α>104 cm-1)in the visible light range,so it is a promising material for application.The MoS_(2)/SnS heterojunction solar cells were simulated by using the solar cell simulation software wxAMPS.The influence of SnS absorption layer thickness,doping concentration and defect states on the performance of solar cells were mainly studied.The results show that the optimal thickness of SnS absorption layer is 2μm,the optimal doping concentration is 1.0×10^(15) cm^(-3),and when the concentration of Gaussian defect states is more than 1.0×10^(15) cm^(-3),the performance parameters of the cell decrease with the increase of concentration.However,when the concentration of tail defect states exceeds 1.0×10^(19) cm^(-3)·eV-1,the performance of solar cell decreases.The interface defect states have obvious influence on the solar cell performance,when the concentration exceeds 1.0×10^(12) cm^(-2),the open circuit voltage,short circuit current,filling factor and conversion efficiency decrease rapidly.In addition,the optimal conversion efficiency is 24.87%,the open circuit voltage is 0.88 V,and the short circuit current is 33.4 mA/cm 2.It can be concluded that MoS_(2)/SnS heterojunction solar cell is a promising photovoltaic device structure.
作者
赵航航
袁吉仁
邓新华
黄海宾
ZHAO Hanghang;YUAN Jiren;DENG Xinhua;HUANG Haibin(School of Science,Nanchang University,Nanchang 330031,China;Institute of Photovoltaic,Nanchang University,Nanchang 330031,China)
出处
《人工晶体学报》
CAS
北大核心
2021年第3期477-483,共7页
Journal of Synthetic Crystals
基金
国家自然科学基金(11964018,11664025)
江西省自然科学基金(20181BAB202027)。
