摘要
功率集成器件在交流转直流(AC/DC)电源转换IC、高压栅驱动IC、LED驱动IC等领域均有着广泛的应用。介绍了典型的可集成功率高压器件,包括不同电压等级的横向双扩散金属氧化物半导体场效应晶体管(LDMOS)以及基于硅和SOI材料的横向绝缘栅双极型晶体管(LIGBT),此外还介绍了高低压器件集成的BCD工艺和其他的功率集成关键技术,包括隔离技术、高压互连技术、dV/dt技术、di/dt技术、抗闩锁技术等,最后讨论了功率集成器件及其兼容技术的发展趋势。
Integrated power devices are widely used in AC/DC power conversion ICs,high-voltage gate driver ICs,LED driver ICs and other fields.This article introduces typical integrated high-voltage power devices,including lateral double-diffusion MOSFET(LDMOS)of different voltage levels and lateral insulated gate bipolar transistor(LIGBT)based on silicon and SOI.In addition,it also introduces the BCD process of high and low voltage device integration and other key power integration technologies,including isolation technology,high voltage interconnection technology,dV/dt technology,di/dt technology,anti-latch-up technology,etc.,and finally the development trend of integrated power devices and compatible technologies are discussed.
作者
乔明
袁柳
QIAO Ming;YUAN Liu(The State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China)
出处
《电子与封装》
2021年第4期71-86,共16页
Electronics & Packaging
基金
国家自然科学基金(61674027)
四川省应用基础研究项目(18YYJC0482)。
