摘要
介绍了纳米级线宽标准样片的用途及其在校准扫描电子显微镜中存在的问题,设计了具有快速循迹结构的线宽标准样片,采用电子束光刻工艺制作了标称宽度为25nm~200nm的线宽样片。以50nm和200nm线宽为例对样片的线宽偏差、线边缘粗糙度、线宽均匀性和稳定性进行了考核。结果表明,标称值50nm~200nm的样片线宽值与设计值基本一致,线边缘粗糙度为1.9nm~2.0nm、均匀性为1.7nm~1.9nm,稳定性为0.06nm~0.6nm。
The use of nanometer line width standard and the problems in calibrating scanning electron microscopes are intro⁃duced,a line width standard with a fast tracking structure is designed,and a nominal width of 25nm~200nm line width sample is de⁃veloped using electron beam lithography.Taking 50nm and 200nm line widths as examples,the line width deviation,line edge roughness,line width uniformity and stability of the samples are evaluated.The results show that the line width of the sample with a nominal value of 50nm~200nm is basically consistent with the design value,the line edge roughness is 1.9nm~2.0nm,the uniformi⁃ty is 1.7nm~1.9nm,and the stability is 0.06nm~0.6nm.
作者
韩志国
李锁印
冯亚南
赵琳
吴爱华
HAN Zhiguo;LI Suoyin;FENG Ya'nan;ZHAO Lin;WU Aihua(The 13th Institute of CETC,Shijiazhuang 050051)
出处
《计算机与数字工程》
2021年第4期664-668,共5页
Computer & Digital Engineering
关键词
线宽标准样片
电子束
线宽偏差
线边缘粗糙度
均匀性
稳定性
line width standard
electron beam
line width deviation
line edge roughness
uniformity
stability
