摘要
P型半导体C_(u)3S_(n)S_(4)具有较高的空穴浓度、较大的光吸收系数和较宽的带隙值范围,在气敏传感器、染料敏化太阳能电池、热电转换等领域具有极高的应用价值。然而,由于其结构的多样性和较宽的带隙值范围,需要根据实际用途进行优化和调整。综述近年来纳米晶C_(u)3S_(n)S_(4)的制备和带隙调整方法,对磁控溅射法、溶剂热法、球磨法等工艺制备纳米晶薄膜和粉体,以及利用调控晶体结构和掺杂调整带隙的方法进行总结归纳,对纳米晶C_(u)3S_(n)S_(4)的研究提出展望。
As a P-type semiconductor,C_(u)3S_(n)S_(4) has significant application value in the fields of gas sensors,dye sensitized solar cells,thermoelectric conversion and so forth due to its high hole concentration,high light absorption coefficient and wide range of bandgap.However,due to its structural diversity and wide bandgap value range,it needs to be optimized and tuned according to actual use.This article reviews the preparation and bandgap tuning methods of nanoscale C_(u)3S_(n)S_(4) in recent years,summarizes the preparation methods of nanoscale films and powders,such as magnetron sputtering,solvothermal,ball milling and other processes,as well as the bandgap tuning methods of crystal structure controlling and doping of nanoscale C_(u)3S_(n)S_(4).In the end,the prospect for the research of nanocrystalline C_(u)3S_(n)S_(4) is put forward.
作者
胡永茂
赵占强
谢再新
段卓琦
周豹
李汝恒
Hu Yongmao;Zhao Zhanqiang;Xie Zaixin;Duan Zhuoqi;Zhou Bao;Li Ruheng(College of Engineering,Dali University,Dali,Yunnan 671003,China)
出处
《大理大学学报》
2021年第6期22-28,共7页
Journal of Dali University
基金
国家自然科学基金项目(11564002)。
