摘要
在电力电子系统中,因器件击穿、硬件电路缺陷或系统控制失误导致碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)误开通时,桥臂电流回路中多个器件处于开通状态,形成串联短路故障。该文以SiC MOSFET半桥电路为研究对象,详细介绍SiC MOSFET串联短路的动态过程,理论分析负载电流、栅极驱动电压和结温温升对SiC MOSFET短路动态特性的影响规律,推导出SiCMOSFET分压模型,并采用仿真模型进行验证。实验基于1 200V/80ASiC MOSFET测试平台验证电路参数对短路损耗和结温分布的影响。理论与实验结果表明,SiC MOSFET串联短路分压特性对电路参数具有较高敏感度,漏极电压与漏极电流不平衡动态变化会改变器件短路损耗,进而影响结温温升,造成串联短路SiC MOSFET不稳定变化。
In power electronic systems,when SiC MOSFET is turned on incorrectly due to breakdown devices,hardware circuit defects or system control errors,at least two devices work in the short-circuit current loop,forming series short-circuit faults.Based on the half-bridge structure,the switching principle of SiC MOSFETs in short-circuit was introduced in detail.To study the influence mechanism of load current,gate drive voltage and junction temperature,the short circuit test was carried out under different experimental situations.The drain-source voltage sharing model of SiC MOSFET was derived and verified by simulation.The changes of short-circuit loss and junction temperature distribution caused by circuit parameters were compared on the 1200 V/80 A SiC MOSFET experimental bench.The results show that the dynamic characteristics of SiC MOSFET are highly sensitive to circuit parameters in series short-circuit.The unbalanced dynamic change of drain-source voltage and drain current affect the short-circuit loss of devices,which in turn changes the junction temperature distribution.
作者
张经纬
张甜
冯源
宋明轩
谭国俊
Zhang Jingwei;Zhang Tian;Feng Yuan;Song Mingxuan;Tan Guojun(School of Electrical and Power Engineering,China University of Mining and Technology,Xuzhou 221116,China)
出处
《电工技术学报》
EI
CSCD
北大核心
2021年第12期2446-2458,共13页
Transactions of China Electrotechnical Society
基金
国家重点研发计划子课题资助项目(2016YFC0600804)。
关键词
SiC
MOSFET
串联短路
分压特性
结温分布
SiC MOSFET
series short-circuit
voltage dividing characteristic
junction temperature distribution
