摘要
作为一种新型超宽禁带半导体闪烁材料,β-Ga_(2)O_(3)具有以下显著特点:室温下可获得几纳秒的快发光成分;理论光产额可达40800 MeV^(-1);斯托克斯位移大;自吸收弱;晶体不易潮解;可以采用熔体法生长大尺寸单晶。本文详细介绍了β-Ga_(2)O_(3)闪烁晶体的基本性质、制备方法和闪烁性能,着重分析了其作为新型半导体闪烁体的独特优势及未来需要解决的关键科学问题和技术难点。
As a new type of ultrawide-bandgap semiconductor scintillator,β-Ga_(2)O_(3) has a fast scintillation component with several nanoseconds at room temperature,and its theoretical light yield can reach 40800 MeV-1.β-Ga_(2)O_(3) also has the advantages of large Stokes shift,far away from the absorption edge,and weak self absorption.It is not hygroscopic,and large single crystals can be grown by melting methods.In this paper,the recent progress ofβ-Ga_(2)O_(3) scintillation crystals is reviewed,mainly including the basic properties,preparation methods,and scintillation properties ofβ-Ga_(2)O_(3) scintillator.The unique advantages ofβ-Ga_(2)O_(3) scintillator as a new type of semiconductor and the key scientific and technical problems to be solved in the future are also emphatically discussed and analyzed.
作者
唐慧丽
刘波
徐军
欧阳晓平
TANG Hui-li;LIU Bo;XU Jun;OUYANG Xiao-ping(MOE Key Laboratory of Advanced Micro-Structured Materials,School of Physics Science andEngineering,Tongji University,Shanghai 200092,China;Northwest Institute of Nuclear Technology,Xi’an 710024,China)
出处
《现代应用物理》
2021年第2期1-10,共10页
Modern Applied Physics
基金
装备预研基金重点资助项目(6140922010601)
国家自然科学基金资助项目(11975168)
强脉冲辐射环境模拟与效应国家重点实验室开放课题专项经费资助项目(SKLIPR2022)。
关键词
闪烁体
超宽禁带半导体
氧化镓
快衰减
闪烁机理
scintillator
ultrawide-bandgap semiconductor
β-Ga_(2)O_(3)
fast decay
scintillation mechanism
