摘要
对GaN行波放大器功放开关进行研究,发现传统功放开关对功放和开关芯片分别进行设计,这样的设计会导致功放开关不能实现最佳的性能。因此采用GaN PHEMT工艺,研制了一款在2~18 GHz频率范围内具有良好性能的超宽带功放开关。为了满足输出功率和增益等指标,功放路采用分布式放大器结构,并将功放与开关进行一体化设计,最终得到性能良好的功放开关。
This paper studies the power amplifier switch of GaN traveling wave amplifier,and finds that the traditional power amplifier switch designs the power amplifier and switch chip separately,which will lead to that the power amplifier switch can not achieve the best performance.Therefore,using GaN PHEMT technology,an ultra wide band power amplifier switch with good performance in the frequency range of 2~18 GHz is developed.In order to meet the targets of output power and gain,the power amplifier adopts the distributed amplifier structure,and carries out integrated design on the power amplifier and switch to get the power amplifier switch with good performance.
作者
吴建刚
张忠山
崔亮
WU Jiangang;ZHANG Zhongshan;CUI Liang(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China)
出处
《现代信息科技》
2021年第4期63-66,共4页
Modern Information Technology
关键词
GAN
超宽带
功放开关
GaN
ultra wide band
power amplifier switch
