摘要
单晶硅作为典型的脆性材料,实现其塑性域去除加工的关键是使切削深度小于裂纹萌生切削深度。采用断裂强度理论,建立单晶硅刻划加工时的径向裂纹、中位裂纹和横向裂纹萌生刻划深度计算方法,计算得到裂纹萌生的刻划深度和划痕深度。设计高速刻划单晶硅的玻氏压头试验装置,并进行单晶硅片刻划试验,实测其径向裂纹萌生的划痕深度,其划痕深度计算值与试验测量值一致性较好。
As a typical brittle material,the key to achieve the plastic domain processing of monocrystalline silicon is to make the cutting depth less than the crack initiation cutting depth.In this experiment,the fracture strength theory is used to establish a method to calculate the initiation scratching depth of radial crack,median crack and lateral crack for monocrystalline silicon scratching processing.The crack initiation scratching depth and scratch depth are calculated.The experimental device for high-speed scratching monocrystalline silicon with a Berkovich indenter is designed,and the scratch depth of the radial crack initiation is measured in the scratching experiment.The calculated values of the scratch depth at radial crack initiation are in good agreement with the experimental measurements.
作者
陈自彬
葛梦然
毕文波
张晨政
葛培琪
CHEN Zibin;GE Mengran;BI Wenbo;ZHANG Chenzheng;GE Peiqi(School of Mechanical Engineering, Shandong University, Jinan 250061, China;School of Mechanical and Electronic Engineering, Shandong Jianzhu University, Jinan 250101, China;Key Laboratory of High-Efficiency and Clean Mechanical Manufacture at Shandong University, Ministry of Education, Jinan 250061, China)
出处
《金刚石与磨料磨具工程》
CAS
北大核心
2021年第3期55-59,共5页
Diamond & Abrasives Engineering
基金
国家自然科学基金(51775317,52005301)
山东省重点研发计划(2019GGX104007)。
关键词
单晶硅
裂纹萌生
刻划深度
划痕深度
monocrystalline silicon
crack initiation
scratching depth
scratch depth
