摘要
Ionic gating is known as a powerful tool for investigation of electronic functionalities stemming from low voltage transistor operation to gate-induced electronic phase control including superconductivity.Two-dimensional(2D)material is one of the archetypal channel materials which exhibit a variety of gate-induced phenomena.Nevertheless,the device simulations on such iongated transistor devices have never been reported,despite its importance for the future design of device structures.In this paper,we developed a drift-diffusion(DD)model on a 2D material,WSe2 monolayer,attached with an ionic liquid,and succeeded in simulating the transport properties,potential profile,carrier density distributions in the transistor configuration.
基金
This research was supported by Grant-in-Aid for Scientific Research(S)(no.19H05602)
Grant-in-Aid for Scientific Research(C)(no.19K05201)from JSPS.
