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Slow Positron Annihilation in Silicide Films Formed by Solid State Interaction of Co/Ti/Si and Co/Si

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摘要 Slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si.Variable-energy(0-20 keV)positrons were implanted into samples at different depths.The Doppler broadening of the annihilation γ-ray energy spectra measured at a number of different incident positron energies is characterized by a line-shape parameter,S.It was found that the measured S parameters are sensitive to thin film reaction and crystalline characteristics.In particular,the S parameter of epitavial CoSi_(2)formed by the ternary reaction is quite different from that of the polycrystalline CoSi_(2)formed by direct reaction of Co with Si.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 1994年第4期231-234,共4页 中国物理快报(英文版)
基金 Chinese Postdoctoral Science Foundation.
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