摘要
WSe_(2)属于二维过渡族金属二硫化物(TMD),具有高迁移率,以及良好的稳定性。本文采用磁控溅射技术和硒化的方法生长了WSe_(2)薄膜,并通过湿法转移的方法构建了WSe_(2)/GaAs异质结光电探测器。通过对WSe_(2)薄膜成分和形貌的表征以及对器件电学性能参数的测试,结果表明,器件具有自驱动能力,在波长为808nm、强度为121 mW/cm^(2)的光照下,器件的开关比可达16.6×10^(4),同时具有毫秒以下的响应速度和持续稳定工作的能力。
WSe_(2) belongs to the two-dimensional transition metal dichalcogenides(TMD),which has high mobility and excellent stability.In this paper,the WSe_(2) thin film was grown by magnetron sputtering and selenization,and the WSe_(2)/GaAs heterojunction photodetector was constructed by wet transfer method.By characterizing the composition and morphology of WSe_(2) thin film and testing the electrical performance parameters of the device,the results show that the device has self-driving ability,and the switching ratio of the device can reach 16.6×10^(4) under the illumination with wavelength of 808nm and intensity of 121 mW/cm^(2).At the same time,it has the response speed below milliseconds and the ability of continuous and stable operation.
作者
李明
陈博瀚
何秀冬
方昶月
Li Ming;Chen Bohan;He Xiudong;Fang Changyue(School of Physics,Hefei University of Technology,Hefei Anhui,230009)
出处
《电子测试》
2021年第16期5-7,共3页
Electronic Test
基金
国家自然科学基金(61675062)。
