摘要
为了解决负跨导振荡器的共模瞬态抗干扰度(Common-Mode Transient Immunity,CMTI)与功耗之间的矛盾,对负跨导振荡器进行了深入的研究和仿真分析。负跨导振荡器发生快速的负CMT事件时,若流出振荡器的位移电流过大,会使得N对管漏端电压被钳位在一个负的二极管压降,导致振荡器停止工作。为了提升负跨导振荡器的CMTI并降低振荡器功耗,提出了一种尾电流可以动态调节的负跨导振荡器的设计方案。仿真结果表明,采用该方案的负跨导振荡器在快速的共模瞬态噪声的影响下,依旧能够维持振荡,保证信号或能量的有效传输。当CMTI为300 V/ns时,功耗为原来的1/7,大大降低了电路的功耗。
In order to solve the contradiction between common-mode transient immunity(CMTI)and power consumption of negative-gm oscillators,this paper conducts in-depth research and simulation analysis of negative-gm oscillators.When a rapid negative CMT event occurs to a negative-gm oscillator,if the displacement current flowing out of the oscillator is too large,the N-pair tube drain voltage will be clamped at a negative diode voltage drop,causing the oscillator to stop working.In order to improve the CMTI of the negative-gm oscillator and reduce the power consumption of the oscillator,a design scheme of the negative-gm oscillator with dynamic tail current regulation is proposed.The simulation results show that the negative-gm oscillator using this scheme can maintain oscillation under the influence of fast CMT noise,and ensure the effective transmission of signal or energy.When CMTI is 300 V/ns,the power consumption is 1/7 of the original,which greatly reduces the power consumption of the circuit.
作者
黎明
方健
马红跃
卜宁
张波
LI Ming;FANG Jian;MA Hongyue;BU Ning;ZHANG Bo(State Key Laboratory of Electronic Thin Films and Integrated Device,University of Electronic Science and Technology of China,Chengdu 610054,China)
出处
《电子与封装》
2021年第9期57-61,共5页
Electronics & Packaging
关键词
负跨导振荡器
片上变压器
共模瞬态抗干扰度
negative-gm oscillator
on-chip transformer
common mode transient immunity
