摘要
该文提出一种改进型Y源逆变器,通过拓扑结构优化,有效地改善了输入电流特性,同时减小母线电压尖峰。以采用SiC MOSFET为例,详尽分析该改进型Y源逆变器的可靠性分析流程及方法。该流程依据器件参数搭建器件的电热耦合模型,分析改进型Y源逆变器逆变桥中开关管的热行为,并且通过查表法获取基于任务剖面的器件热负荷曲线。考虑相应寿命模型以及Miner理论,实现了开关管的寿命预测。最后通过蒙特卡洛分析以及威布尔拟合完成系统元件及该系统的可靠性研究。相关研究内容可为后续相似电路可靠性分析提供参考。
This paper presents a modified Y source inverter(M-YSI),which owns better input current performance and low DC-link voltage spike by optimal topology.Taken SiC MOSFETs as an example,the reliability analysis process and method are provided in detail.This process builds the electro-thermal coupling model of switches based on the device parameters and analyzes the thermal behavior of the switches in the inverter bridge of the M-YSI.The thermal loading of switches based on the mission profile is obtained through the look-up table method.The life prediction of switches is realized by considering lifetime model and Miner rules.Finally,Monte Carlo analysis and Weibull fitting are used to complete the reliability analysis.The research content can provide reference for reliability analysis of similar circuits.
作者
姚婷婷
管乐诗
石恩达
王卫
徐殿国
Yao Tingting;Guan Yueshi;Shi Enda;Wang Wei;Xu Dianguo(School of Electrical Engineering Harbin Institute of Technology ,Harbin 150001 China)
出处
《电工技术学报》
EI
CSCD
北大核心
2021年第S01期209-217,共9页
Transactions of China Electrotechnical Society
基金
国家自然科学基金资助项目(51977045)。
关键词
改进型Y逆变器
低电压尖峰
吸收回路
可靠性
Modified Y source inverter
low voltage spike
absorbing circuit
reliability
