摘要
We report a GaSb-based type-I quantum well cascade diode laser emitting at nearly 2-μm wavelength.The recycling of carriers is realized by the gradient AlGaAsSb barrier and chirped GaSb/AlSb/InAs electron injector.The growth of quaternary digital alloy with a gradually changed composition by short-period superlattices is introduced in detail in this paper.And the quantum well cascade laser with 100-μm-wide,2-mm-long ridge generates an about continuous-wave output of 0.8 W at room temperature.The characteristic temperature T_(0) is estimated at above 60 K.
基金
Project supported by the Major Program of the National Natural Science Foundation of China(Grant No.61790581)
the Key Area Research and Development Program of Guangdong Province,China(Grant No.2020B0303020001).
