摘要
The absorption coefficient is usually considered as a constant for certain materials at the given wavelength.However,recent experiments demonstrated that the absorption coefficient could be enhanced a lot by the PN junction.The absorption coefficient varies with the thickness of the intrinsic layer in a PIN structure.Here,we interpret the anomalous absorption coefficient from the competition between recombination and drift for non-equilibrium carriers.Based on the Fokker-Planck theory,a non-equilibrium statistical model that describes the relationship between absorption coefficient and material thickness has been proposed.It could predict the experimental data well.Our results can give new ideas to design photoelectric devices.
作者
Xiansheng Tang
Baoan Sun
Chen Yue
Xinxin Li
Junyang Zhang
Zhen Deng
Chunhua Du
Wenxin Wang
Haiqiang Jia
Yang Jiang
Weihua Wang
Hong Chen
唐先胜;孙保安;岳琛;李欣欣;张珺玚;邓震;杜春花;王文新;贾海强;江洋;汪卫华;陈弘(Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Center of Material and Optoelectronics Engineering,University of Academy of Sciences,Beijing 100049,China;Songshan Lake Material Laboratory,Dongguan 523808,China)
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.61804176,61991441,and 62004218)
the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB01000000)
the Youth Innovation Promotion Association of Chinese Academy of Sciences.
