摘要
Robust quantum cascade laser(QCL)enduring high temperature continuous-wave(CW)operation is of critical importance for some applications.We report on the realization of lattice-matched InGaAs/InAlAs/InP QCL materials grown by metal-organic chemical vapor deposition(MOCVD).High interface quality structures designed for light emission at 8.5μm are achieved by optimizing and precise controlling of growth conditions.A CW output power of 1.04 W at 288 K was obtained from a 4 mm-long and 10μm-wide coated laser.Corresponding maximum wall-plug efficiency and threshold current density were 7.1%and 1.18 kA/cm2,respectively.The device can operate in CW mode up to 408 K with an output power of 160 mW.
基金
The authors would thank Ping Liang and Ying Hu for their help with device fabrication.This work was supported by the National Key Research and Development Program of China(Grant No.2020YFB0408401)
in part by the National Natural Science Foundation of China(Grant Nos.61991430,61774146,61790583,61734006,61835011,61674144,61774150,61805168)
in part by Beijing Municipal Science&Technology Commission(Grant No.Z201100004020006)
in part by the Key Projects of the Chinese Academy of Sciences(Grant Nos.2018147,YJKYYQ20190002,QYZDJ-SSW-JSC027,XDB43000000,ZDKYYQ20200006).
