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Compositional modulation in ZnGa_(2)0_(4) via Zn^(2+)/Ge^(4+)co-doping to simultaneously lower sintering temperature and improve microwave dielectric properties

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摘要 AB_(2)O_(4)-type spinels with low relative permittivity(ε_(τ))and high quality factor(Q×f)are crucial to high-speed signal propagation systems.In this work,Zn^(2+)/Ge^(4+) co-doping to substitute Ga in ZnGa_(2)O_(4) was designed to lower the sintering temperature and adjust the thermal stability of resonance frequency simultaneously.Zn_(1+2)Ga_(2-2x)Ge_(x)O_(4)(0.1≤x≤0.5)ceramics were synthesised by the conventional solid state method.Zn^(2+)/Ge^(4+) co-substitution induced minimal variation in the macroscopical spinel structure,which effectively lowered the sintering temperature from 1385 to 1250℃.All compositions crystallized in a normal spinel structure and exhibited dense microstructures and excellent microwave dielectric properties.The compositional dependent quality factor was related to the microstructural variation,being confirmed by Raman features.A composition with x=0.3 shows the best dielectric properties with ε_(τ) ≈10.09,Q×f≈112,700 THz,and ε_(τ) ≈-75.6 ppm/℃.The negative τf value was further adjusted to be near-zero through the formation of composite ceramics with TiO_(2).
出处 《Journal of Advanced Ceramics》 SCIE CAS CSCD 2021年第6期1360-1370,共11页 先进陶瓷(英文)
基金 support from the National Natural Science Foundation of China(No.62061011) the Guangxi Zhuang Autonomous Region(Nos.2018GXNSFAA281253 and 2019GXNSFGA245006) the High-Level Innovation Team and Outstanding Scholar Program of Guangxi Institutes.
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