摘要
本文以ZnCdS和CsPbBr_(3)量子点为例,研究了量子点在透射电镜中的电子辐照损伤行为。研究表明:低倍率(<100 k)下量子点受到的辐照损伤较小,对成像的影响可以忽略;在高倍率(400 k)下,电子束辐照会对量子点造成极大的损伤,导致其形貌和结构都产生明显的改变;光强越大,辐照时间越长,样品的损伤越严重。本文同时介绍了一种偏转光路的拍照技巧,可以有效地减少电子束辐照对量子点的结构破坏,并获得清晰度较高的高分辨图像。
In this paper, the electron-beam irradiation-damage activity of ZnCdS and CsPbBr_(3)quantum dots(QDs) in TEM observation is investigated. The results show that the irradiation damage in low magnification(<100 k) influences less to the image of quantum dots. But the irradiation damage in high magnification(400 k) observation becomes apparent and the structure of the QDs changes obviously. The irradiation damage increases with the electron irradiation intensity and the irradiation time. Finally, a photography skill of deflecting the light path is introduced to decrease the irradiation damage and obtain fidelity image of QDs.
作者
刘丽月
曾江涛
LIU Li-yue;ZENG Jiang-tao(School of Chemistry and Chemical Engineering,Shanghai Jiao Tong University,Shanghai 200240;Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 201899,China)
出处
《电子显微学报》
CAS
CSCD
北大核心
2022年第1期15-19,共5页
Journal of Chinese Electron Microscopy Society
基金
中国科学院无机功能材料与器件重点实验室开放课题资助(No.KLIFMD201807)。
