摘要
集成电路的核心器件尺寸越来越小,传统工艺逐渐不能满足要求。文章基于Global Foundries 22 nm FDSOI先进工艺,利用自偏置折叠共源共栅运算放大器,设计了一款带隙基准电压源,仿真结果表明,在电源电压为1.53~1.8 V范围内,输出电压为800 mV;在不同的工艺角下,温度从-40~125℃变化,输出电压在786.3~806.5 mV之间,变化范围为-14~6.5 mV,精确度为-1.75%~0.81%。
The size of the core devices of integrated circuits is getting smaller and smaller, and the traditional technology can not meet the requirements gradually. In this paper, based on the advanced Global Foundrie 22 nm FDSOI process, a bandgap reference voltage source is designed by using a self-biased cascode operational amplifier. The simulation results show that the output voltage is 800 mV in the supply voltage range of 1.53~1.8 V;under different process angles, the temperature varies from -40 to 125℃, the output voltage varies between 786.3~806.5 m V, the range is -14~6.5 mV, and the accuracy is -1.75%~0.81%.
出处
《科技创新与应用》
2022年第5期97-100,共4页
Technology Innovation and Application
关键词
带隙基准
22
nm全耗尽绝缘体上硅
温度系数
bandgap reference
silicon on 22nm fully depleted insulator
temperature coefficient
