摘要
高输出功率和长期可靠性是高功率半导体激光器得以广泛应用的前提,但高功率密度下腔面退化导致的光学灾变损伤(COD)制约了激光器的最大输出功率和可靠性。为了提高915 nm InGaAsP/GaAsP半导体激光器的COD阈值,利用金属有机物化学气相沉积设备来外延生长初次样片。探讨了量子阱混杂对初次外延片发光的影响。此外,使用光致发光谱测量了波峰蓝移量和发光强度。实验结果表明,在退火温度为890℃、退火时间为10 min条件下,波峰蓝移量达到了62.5 nm。对初次外延片进行量子阱混杂可得到较大的波峰蓝移量,且在退火温度为800~890℃、退火时间为10 min的条件下峰值强度均保持在原样片峰值强度的75%以上。
High output power and long-term reliability are the prerequisites for the wide application of high power semiconductor lasers, but the optical catastrophic damage(COD) caused by cavity surface degradation at high power density restricts the maximum output power and reliability of semiconductor lasers. In order to improve the COD threshold of 915 nm InGaAsP/GaAsP semiconductor lasers, the primary wafer is epitaxially grown by metal organic chemical vapor deposition equipment. The influence of quantum well intermixing on the luminescence of the primary wafers is investigated. Moreover, the peak blue shift and luminescence intensity are measured by photoluminescence spectrum. The experimental results show that the peak blue shift reaches 62.5 nm when the annealing temperature is 890 ℃ and the annealing time is 10 min. A large peak blue shift is obtained by intermixing the primary sample, and the peak intensities are kept above 75% of the peak intensity of the original wafer in the annealing temperature range of 800--890 ℃ and 10 min annealing time.
作者
何天将
井红旗
朱凌妮
刘素平
马骁宇
He Tianjiang;Jing Hongqi;Zhu Lingni;Liu Suping;Ma Xiaoyu(National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronics,University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《光学学报》
EI
CAS
CSCD
北大核心
2022年第1期192-198,共7页
Acta Optica Sinica
基金
国防科技重点基金(6142405041803)。
关键词
激光器
高功率半导体激光器
快速热退火
量子阱混杂
光学灾变损伤
非吸收窗口
lasers
high power semiconductor laser
rapid thermal annealing
quantum well intermixing
optical catastrophic damage
nonabsorbent window
