摘要
采用有限元模拟法研究三维集成电路集成中硅通孔结构在热循环载荷条件下的失效行为,对硅通孔结构的应力应变进行分析。结果表明,硅通孔结构在热循环载荷下顶部Cu焊盘角落附近的SiO;层处具有最大的应力与应变,这表明硅通孔结构中最易失效位置在顶部Cu焊盘角落附近Cu和SiO;的界面处。试验结果与模拟分析一致,进一步验证了模拟结果对硅通孔结构最易失效位置分析的可靠性。
The finite element simulation method is used to study the failure behavior of TSV structures in3D integrated circuits under thermal cyclic loading conditions,and the stress and strain of TSV structures are analyzed.The results show that the maximum deformation amount of the TSV structure under thermal cyclic loading is located at the center of the top Cu pad,and the SiO;layer near the corners of the top Cu pad has the largest stress and strain,which indicates that the TSV structure in the The most vulnerable location is at the interface of Cu and SiO;near the corner of the top Cu pad.The experimental results are consistent with the simulation analysis,which further verifies the reliability of the simulation results for the analysis of the most vulnerable location of the TSV structure.
作者
苏鹏
徐鹏程
秦进功
王东
田野
SU Peng;XU Pengcheng;QIN Jingong;WANG Dong;TIAN Ye(Henan University of Technology,Zhengzhou 450000,China)
出处
《河南科技》
2022年第4期51-54,共4页
Henan Science and Technology
关键词
硅通孔
三维封装
热循环
可靠性
有限元分析法
through silicon via
3D packaging
thermal cycling
reliability
finite element analysis method
