摘要
阻变器件是一种微电子器件,具有阻值可在两个甚至两个以上的阻态之间重复变化的特点。忆阻器作为新型的阻变器件,具有可连续变化的丰富阻态。近年来因其具备简单的二端结构、高集成度以及低工作电压等特性,在新型非易失性存储以及构建神经形态系统等方面被广泛研究。但其在实现应用的过程中仍存在着稳定性较差等问题。近期一些工作证明了二维材料如氧化石墨烯在优化忆阻器性能方面具备良好的应用潜力。MXene是一种具备类似石墨烯结构的新型二维过渡金属碳/氮化物,因其具备二维层状结构显现出特殊的力学以及电学特性,有望应用于忆阻器中以提高器件的电学性能。在本文中,我们通过化学湿法刻蚀制备了Ti_(3)C_(2)粉末,通过旋涂工艺在忆阻器结构中引入Ti_(3)C_(2)薄膜。Ti_(3)C_(2)MXene与SiO_(2)同时作为忆阻器阻变层,制备了Cu/Ti_(3)C_(2)/SiO_(2)/W结构的忆阻器,并且对其相关电学特性进行了探究。在该器件上,通过实验测得忆阻器典型的开关特性曲线并在双向直流电压下针对高、低阻态的可重复性、稳定性进行了实验。结果表明该器件能够在100个扫描循环过程中保持稳定的高、低阻态达到10^(4) s以上。同时,该器件状态能够受脉冲电压调节,实现突触间典型的双脉冲易化行为。实验结果表明基于Ti_(3)C_(2)MXene的忆阻器将有望应用于构建新兴存储设备以及人工神经形态系统。
Resistive switching devices have the advantage that the resistance can be repeatedly regulated between two or more resistance states.As a new resistive switching device,a memristor has abundant resistance states that can be continuously tuned.In recent years,memristors have been extensively studied for emerging nonvolatile memories and in the construction of neuromorphic systems owing to their simple two-terminal structure,high integration,and low operating voltage compared with those of traditional metal-oxide-semiconductor field-effect transistors.However,their application is limited owing to their relatively poor reliability.Recently,several studies have shown that twodimensional materials such as graphene oxide can optimize the memristor performance.A new two-dimensional material,MXene,also exhibits special mechanical and electrical properties that show promise for use in memristors owing to its two-dimensional layered structure similar to that of graphene.MXene is a two-dimensional transition metal carbide/nitride of the form M_(n+1)X_(n),where M is an early transition metal and X is carbon or nitrogen.Its other characteristics such as hydrophilic surfaces and ultrahigh metal conductivity(6000–8000 S·cm^(−1))have been studied,and it has been applied to energy storage devices and electronic devices such as supercapacitors and secondary batteries.However,the application of MXene in resistive devices has been rarely investigated,especially for memristors.In this study,we prepared Ti_(3)C_(2)powder by etching layered compounds of Ti_(3)AlC_(2) with a mixture of HCl and HF.Next,Ti_(3)C_(2)film was introduced into the memristor structure by spincoating.The physical characteristics of Ti_(3)C_(2)were investigated and analyzed by X-ray diffraction and scanning electron microscopy,and a memristor with Cu/Ti_(3)C_(2)/SiO_(2)/W structure was fabricated.In this structure,Ti_(3)C_(2)and SiO_(2) were introduced as resistive layers,and related electrical properties were investigated.Under dual DC voltage sweeping,the typical switching characteristic curves of the memristor were measured.Moreover,the repeatability and stability of highand low-resistance states were investigated and analyzed,respectively.The experimental results show that the device can maintain stable high-and low-resistance states for>10^(4) s during 100 dual-voltage sweeping cycles.In addition,the device can be regulated by a pulse voltage and realize typical paired-pulse facilitation that is similar to biological synapses.This work proved that the Cu/Ti_(3)C_(2)/SiO_(2)/W memristor has huge potential for application in the construction of emerging memory devices and artificial neuromorphic systems.
作者
王钰琪
张缪城
徐威
沈心怡
高斐
朱家乐
万相
连晓娟
许剑光
童祎
Yuqi Wang;Miaocheng Zhang;Wei Xu;Xinyi Shen;Fei Gao;Jiale Zhu;Xiang Wan;Xiaojuan Lian;Jianguang Xu;Yi Tong(College of Electronic and Optical Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China.;School of Materials Science and Engineering,Yancheng Institute of Technology,Yancheng 224051,Jiangsu Province,China.;Engineering Product Development,Singapore University of Technology and Design,Singapore 487372.)
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
2022年第3期15-22,共8页
Acta Physico-Chimica Sinica
基金
国家自然科学基金(61704088,61874059,21671167)
中国博士后科学基金(2018M642290)
江苏省研究生创新计划(SJCX19_0256)
江苏省重点人才工程(SZDG2018007,TJ218001)资助项目。
关键词
阻变器件
忆阻器
湿法刻蚀
MXene
导电特性
导电机理
Resistive switching device
Memristor
Wet etching
MXene
Conductive performance
Conductive mechanism
