摘要
Photocatalysis is an efective means to solve the greenhouse efect caused by the large amount of carbon dioxide(CO_(2))emissions from fossil fuel consumption.Graphitic carbon nitride(g-C_(3)N_(4))has the advantages of suitable band gap,easy preparation,low price,and good stability,making it a promising semiconductor photocatalyst.However,bulk g-C3N4 also has disadvantages such as low gas adsorption,low photocatalytic efciency,narrow spectral response,and easy recombination of electron–hole pairs.The modifcation method based on g-C_(3)N_(4) photocatalyst helps to improve the above-mentioned problems.This review summarizes the research progress in recent years from four aspects:morphology adjustment,co-catalysts,heterostructures and doping.Each aspect includes the pros and cons of diferent improvement methods,the comparison of theoretical calculations and experimental results,the application of diferent characterization methods,and the detailed listing of product yield and selectivity.Prior to this,there was an explanation of the basic theory of semiconductor photocatalytic CO_(2) reduction.Finally,the future challenges and development prospects are also briefy prospected.
基金
This research was supported by Key Program for International S&T Cooperation Program of China(2017YFE0113000)
the National Natural Science Foundation of China(51971133,51801121,51902200,and 52072241)
the Shanghai Science and Technology Committee(18JC1410500,19JC1410400,19ZR1425100,and 18ZR1420900)
the National Key Research and Development Program(YS2017YFGH000385)
State Key Laboratory for Modifcation of Chemical Fibers and Polymer Materials,Donghua University.
