期刊文献+

Enhancement in photovoltaic properties of Nd:SnS films prepared by low-cost NSP method 被引量:1

原文传递
导出
摘要 The inner transition metal(ITM) neodymium(Nd)-doped tin sulfide(Nd:SnS) thin films with various Nd concentrations were coated by nebulizer spray pyrolysis(NSP) technique at 350℃. All the coated films were analyzed for their structural, optical and photoelectrical properties. X-ray diffractometer(XRD) study showed(111) direction as the highly preferred orientation with orthorhombic crystal structure for all the films. The intensity of the peaks was found to increase until 5 at% Nd doping and then reduced for higher(7 at% Nd) doping concentration. Atomic force microscopic(AFM) images of the films proclaimed an increase in the surface and line roughness of the films by increasing Nd concentrations.Optical analysis on the films showed a variation in energy gap from 2.05 to 1.69 eV when the doping concentration increased from 0 at% to 7 at%. At 5 at% Nd doping, the photoluminescence(PL) spectra displayed a single strong emission peak at 723.1 nm with enhanced intensity corresponding to near-band-edge emission. All the SnS thin films exhibited p-type behavior with the lowest resistivity of ~ 4.311 Ω·cm and high carrier concentrations of ~ 1.441 × 10^(17)cm^(-3) for 5 at% Nd doping level as observed from Hall effect studies. Furthermore, fluorinedoped tin oxide(FTO)/n-CdS/p-Nd:SnS hetero-junction solar cells were prepared and the current–voltage curve in dark and light condition was obtained for the device. An efficiency of 0.135% was observed for the solar cell fabricated with 5 at% Nd-doped SnS thin film.
出处 《Rare Metals》 SCIE EI CAS CSCD 2022年第5期1661-1670,共10页 稀有金属(英文版)
基金 the project from the Department of Science and Technology,New Delhi,India(DST-SERB)(No.SB/FTP/PS-131/2013) the Deanship of Scientific Research at King Khalid University for funding this work through research groups program under grant number R.G.P.2/42/40。
  • 相关文献

参考文献1

二级参考文献13

  • 1M. Jayachandran,S. Mohan,B. Subramanian,C. Sanjeeviraja,V. Ganesan.Studies on the brush plated SnS thin films[J].Journal of Materials Science Letters.2001(4)
  • 2Yanuar,F. Guastavino,C. Llinares,K. Djessas,G. Masse.SnS thin films grown by close-spaced vapor transport[J].Journal of Materials Science Letters.2000(23)
  • 3ZULKARNAIN ZAINAL,MOHD ZOBIR HUSSEIN,ANUAR KASSIM,ARNIZA GHAZALI.Electrodeposited SnS thin films from aqueous solution[J].Journal of Materials Science Letters.1997(17)
  • 4NAIR M T S,NAIR P K.Simphfied chemical deposition technique for good quality SnS thin films[].Semicon- ductor Science and Technology.1991
  • 5TANUSEVSKI A,POELMAN D.Optical and photocon- ductive properties of SnS thin films prepared by elec- tron beam evaporation[].Solar Energy Materials.2003
  • 6JAYACHANDRAN M,MOHAN S.Studies on the brush plated SnS thin films[].Journal of Materials.2000
  • 7CRUZ M,MORALES J,ESPIONS J P,SNNZ J.Sn NMR study of tin sulfides obtained by using chemical vapor transport methods[].Journal of Solid State Chemistry.2003
  • 8ZULKARNAIN Zainal,MOHD Z H,ANUAR K,ARNIZA G.Electrodeposited SnS thin films from aqueous solution[].Journal of Materials.1997
  • 9GUASTAVINO Y F,LLINARES C.SnS thin films grown by close-spaced vapor transport[].Journal of Materials.2000
  • 10Sekhar C Ray,Mal ay K Karanj ai,Dhruba Das Gu pt a.Structure and phot oconducti ve proper ti es of di p-deposit ed SnS and SnS2 thi n fil ms and their conversi on t o ti n di oxi de by anneali ng i n air[].The Solid Film.1999

共引文献2

同被引文献8

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部