摘要
To optimize the dark current characteristic and detection efficiency of the 1550 nm weak light signal at room temperature,this work proposes a Ge-on-Si avalanche photodiode[APD]in Geiger mode,which could operate at 300 K.This lateral separate absorption charge multiplication APD shows a low breakdown voltage[V_(br)]in Geiger mode of-7.42 V and low dark current of 0.096 n A at unity gain voltage[V_(Gain)=1=-7.03 V].Combined with an RF amplifier module and counter,the detection system demonstrates a low dark count rate[DCR]of 1.1×10^(6) counts per second and high detection efficiencyηof 7.8%for 1550 nm weak coherent pulse detection at 300 K.The APD reported in this work weakens the dependence of the weak optical signal recognition on the low environment temperature and makes single-chip integration of the single-photon level detection system possible.
作者
Yuxuan Li
Xiaobin Liu
Xuetong Li
Lanxuan Zhang
Baisong Chen
Zihao Zhi
Xueyan Li
Guowei Zhang
Peng Ye
Guanzhong Huang
Deyong He
Wei Chen
Fengli Gao
Pengfei Guo
Xianshu Luo
Guoqiang Lo
Junfeng Song
李雨轩;刘小斌;李雪童;张蓝萱;陈柏松;支自毫;李雪妍;张国威;叶鹏;黄冠中;何德勇;陈巍;郜锋利;郭鹏飞;罗贤树;卢国强;宋俊峰(State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China;CAS Key Laboratory of Quantum Information,University of Science and Technology of China,Hefei 230026,China;CAS Center for Excellence in Quantum Information and Quantum Physics,University of Science and Technology of China,Hefei 230026,China;Advanced Micro Foundry Pte Ltd.,Singapore 117685,Singpore;Peng Cheng Laboratory,Shenzhen 518000,China)
基金
supported by the National Natural Science Foundation of China(Nos.61627820,61934003,and62090054)
Jilin Scientific and Technological Development Program(No.20200501007GX)
Program for Jilin University Science and Technology Innovative Research Team(Nos.JLUSTIRT and 2021TD-39)。
