摘要
以六羰基钼和氧气为前驱体,通过等离子增强原子层沉积技术(PE-ALD)在硅基片上实现了α-MoO_(3)薄膜的低温制备。利用X射线衍射仪、扫描电子显微镜、原子力显微镜、X射线光电子能谱仪等手段对薄膜的晶体结构、表面形貌及薄膜成分进行表征和分析。研究发现衬底温度和氧源脉冲时间对MoO_(3)薄膜的晶体结构和表面形貌变化起关键作用。当衬底温度为170℃及以上时所制备的薄膜为α-MoO_(3);适当延长ALD单循环中的氧源脉冲时间有利于低温沉积沿(0k0)高度择优取向的MoO_(3)薄膜。根据对不同厚度MoO_(3)薄膜表面的原子力显微图片分析,MoO_(3)薄膜为岛状生长模式。
Polycrystalline MoO_(3)thin films were fabricated on silicon substrates at low temperature by plasma-enhanced atomic layer deposition(PE-ALD)using molybdenum hexacarbonyl and oxygen as precursors.Crystal structure,surface morphology,elemental composition of the deposited MoO_(3)films were characterized by XRD,SEM,AFM and XPS.Results show that the crystal structure and surface morphology of the fabricated MoO_(3)thin films are highly dependent on the substrate temperature and the pulse time of the oxygen plasma.When the substrate temperature is 170℃and above,the as-grown film isα-MoO_(3).Highly(0k0)prefer-orientated MoO_(3)thin films can be obtained at 170℃by properly prolonging the pulse time of oxygen plasma to 60 s.The films are followed by the island growth mode based on the AFM analysis.
作者
成天乐
曹发
李佳
季小红
CHENG Tianle;CAO Fa;LI Jia;JI Xiaohong(School of Materials Science and Engineering,South China University of Technology,Guangzhou 510641,CHN)
出处
《半导体光电》
CAS
北大核心
2022年第3期567-572,共6页
Semiconductor Optoelectronics
