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一种含有新型薄膜的硅基MEMS压力-温度集成传感器 被引量:1

An integrated pressure-temperature sensor based on silicon MEMS and a new film
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摘要 提出了一种含有新型不规则形状的压力敏感膜的压阻式压力传感器,这种新型薄膜结构能够将整个膜面的应变聚集在四个局部区域内,从而提高传感器的灵敏度。惠斯通电桥被用来实现压强到电信号的转换,而电桥上的薄膜电阻刚好位于压力敏感膜片上的四个应变最大区域。实验测试表明,压力传感器能在3~129 kPa压强范围内正常工作,灵敏度为27.34μV/kPa,迟滞为1.2%,精度为±2.348%FS。此外,还在压力敏感膜外的零应变区集成了一个温敏电阻R_(T)作为温度传感器,仿真和测试结果表明,压强不会干扰温敏电阻的工作。采用开尔文四线法来测量R_(T)与温度的关系,测试结果表明温度传感器能在16~113℃的温度范围内工作,灵敏度为2.55Ω/℃,迟滞误差为0.1%,精度为±0.145%FS。 Here a piezoresistive pressure sensor is proposed with a novel irregularly shaped pressure sensitive film.This novel film structure can concentrate the strain of the entire film in four local areas to improve the sensitivity of the sensor.Wheatstone bridge was used to convert pressure into electrical signal.And the film resistor on the bridge was located at the four maximum strained areas of the pressure sensitive film.The experimental test shows that the pressure sensor can work normally from 3 to 129 kPa with sensitivity of 27.34 μV/kPa,hysteresis of 1.2%,and the accuracy of ±2.348%FS.In addition,a thermistor R_(T) was integrated in the zero-strain region outside the pressure-sensitive film as a temperature sensor.Simulation and test results show that the film stress does not interfere with the thermistor.Kelvin four wire method was used to measure the relationship between R_(T) and temperature.Test results show that the temperature sensor can work from 16 to 113 ℃ with sensitivity of 2.55 Ω/℃,hysteresis of 0.1%,and accuracy of ±0.145%FS.
作者 陈果 王江 吴世海 王韬 张万里 CHEN Guo;WANG Jiang;WU Shihai;WANG Tao;ZHANG Wanli(School of Electronic Science and Engineering,University of Electronic Science&Technology of China,Chengdu 610054,China;Guizhou Aerospace Smart Agriculture Co.,Ltd.,Guiyang 550025,China)
出处 《电子元件与材料》 CAS CSCD 北大核心 2022年第8期822-826,共5页 Electronic Components And Materials
关键词 压阻式压力传感器 温度传感器 惠斯通电桥 开尔文四线法 piezoresistive pressure sensor temperature sensor Wheatstone bridge Kelvin four-wire method
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