摘要
优化设计了电力系统用6.5 kV SiC MOSFET,测得该器件的导通电流为25 A,阻断电压为6800 V,器件的巴利加优值(BFOM)达到925 MW/cm^(2)。基于感性负载测试电路测试了器件的高压开关瞬态波形。在此基础上,借助仿真软件构建6.5 kV SiC MOSFET芯片级和器件级仿真模型,通过改变器件元胞结构、阱区掺杂浓度、栅极电阻、寄生电感等参数,研究了6.5 kV SiC MOSFET开关瞬态过程和电学振荡影响因素。结果表明,减小结型场效应晶体管(JFET)宽度有利于提高器件dV/dt能力,而源极寄生电感和栅极电阻是引起栅极电压振荡的重要因素。研究结果有助于分析研究6.5 kV SiC MOSFET在智能电网应用中的开关特性,使得基于SiC MOSFET的功率变换器系统具有更低的损耗、更高的频率和更高的可靠性。
The 6.5 kV SiC metal-oxide-semiconductor field-effect transistor(MOSFET)used in power system was optimized and designed.It is measured that the on-state current of the device is 25 A,the blocking voltage is 6800 V,and the Baliga’s figure of merit(BFOM)is 925 MW/cm^(2).The transient waveform of high-voltage switching of the device was tested based on the inductive load test circuit.On this basis,the chip-level and device-level simulation models of 6.5 kV SiC MOSFETs were built with the simulation software.By changing the cell structure of the device,doping concentration of the well region,gate resistance,parasitic inductance and other parameters,the switching transient process and influencing factors of electrical oscillation of 6.5 kV SiC MOSFETs were studied.The results show that reducing the width of the junction field effect transistor(JFET)is beneficial to improve the dV/dt capability of the device,and the parasitic inductance of the source and the gate resistance are the key factors causing the gate voltage oscillation.The research results are helpful to analyze and study the switching characteristics of 6.5 kV SiC MOSFETs in smart grid applications,so that the power converter system based on SiC MOSFETs has lower loss,higher frequency and higher reliability.
作者
魏晓光
张文婷
申占伟
田丽欣
孙国胜
杨霏
Wei Xiaoguang;Zhang Wenting;Shen Zhanwei;Tian Lixin;Sun Guosheng;Yang Fei(State Key Laboratory of Advanced Power Transmission Technology(State Grid Smart Grid Research Institute Co.,Ltd.),Beijing 102209,China;Key Laboratory of Semiconductor Material Sciences,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
出处
《半导体技术》
CAS
北大核心
2022年第8期612-620,共9页
Semiconductor Technology
基金
国家电网公司总部科技项目(5500-202058402A-0-0-00)。
