摘要
With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has become one of the hot spots of research. ZnTe is commonly used in the semiconductor industry due to its superior optoelectronic properties. Electrochemical deposition is one of the most frequently used methods to prepare ZnTe thin films. However,the traditional electrochemical deposition technology has many shortcomings, such as slow deposition rate and poor film quality. These hinder the large-scale promotion of zinc telluride electrochemical deposition technology. To solve the problems encountered in the preparation of semiconductor thin films by conventional electrochemical deposition, and based on the photoconductive properties of semiconductor materials themselves, the basic principles of photoelectrochemistry of semiconductor electrodes, and some characteristics of the electrochemical deposition process of semiconductor materials, the use of photoelectrochemical deposition method for the preparation of semiconductor materials was proposed. Firstly, the electrochemical behaviors(electrode reactions, nucleation growth and charge transport process) of the ZnTe electrodeposition under illumination and dark state conditions were studied. Then, the potentiostatic deposition of ZnTe was carried out under light and dark conditions. The phase structure, morphology and composition of the sediments were studied using X-ray diffractometer, scanning electron microscope and other testing methods. Finally, the photoelectrochemical deposition mechanisms were analyzed. Compared with conventional electrochemical deposition, photoelectrochemical deposition increases the current density during deposition and reduces the charge transfer impedance during ZnTe deposition process. In addition, since light illumination promotes the deposition of the difficult-to-deposit element Zn, the component ratio of ZnTe thin films prepared by photoelectrochemical deposition is closer to 1:1, making it a viable and reliable approach for ZnTe production.
碲化锌(ZnTe)因其具有优越的光电特性常应用于半导体行业。电化学沉积法是制备ZnTe薄膜最常用的方法之一,但传统的电化学沉积技术存在许多不足,如沉积速率较慢、薄膜质量较差等,这些缺点阻碍着碲化锌电化学沉积技术的大规模推广。为了解决常规电化学沉积制备半导体薄膜所遇到的问题,本文基于半导体材料自身的光电导性质、半导体电极的光电化学基本原理以及半导体材料电化学沉积过程的一些特征,提出了采用光电化学沉积的方法来进行半导体材料的制备。首先,研究了ZnTe电沉积在光照和暗态条件下的电化学行为(电极反应、成核与生长模式和电荷传输过程);然后,在明暗条件下进行ZnTe的恒电位沉积。采用X射线衍射仪、扫描电镜等检测手段对沉积物的物相、形貌和成分进行了研究;最后,分析了光电化学沉积机理。与传统的电化学沉积相比,光电化学沉积法增加了沉积过程中的电流密度,并降低了ZnTe沉积过程中的电荷转移阻抗。此外,光照促进了难沉积元素Zn的沉积。通过光电化学沉积制备的ZnTe薄膜的组分比接近1∶1,使其成为一种可行且可靠的制备ZnTe的方法。
作者
LUO Miao-si
MA Zi-wei
ZHANG Zong-liang
WANG Zhi-jian
JIANG Liang-xing
JIA ming
LIU Fang-yang
罗淼思;马子为;张宗良;王志坚;蒋良兴;贾明;刘芳洋(School of Metallurgy and Environment,Central South University,Changsha 410083,China;Department of Material Science&Engineering,University of Utah,Salt Lake City,Utah,84112,USA;Hunan Rare Earth Metal Materials Research Institute,Hunan Key Laboratory for Rare Earth Functional Materials,Changsha 410126,China)
基金
Project(51774341) supported by the National Natural Science Foundation of China
Project(2018GK4001) supported by the Science and Technology Tackling and Transformation of Major Scientific and Technological Achievements Project of Hunan Province,China。
