摘要
H型栅SOI PMOS结构因为其抗辐照能力强,对称性较好,在SOI电路设计中得到广泛应用。但其跨导在栅电压变化时具有明显的双峰效应,而通用的BSIMSOI模型无法反映出该类器件的跨导双峰效应,为器件特性的仿真和预测带来了挑战。针对此问题,基于BSIMSOI仿真模型,利用子电路定义了两条并联的晶体管沟道,建立了H型栅PMOS结构的SPICE模型。该模型可有效表现SOI工艺下的PMOS器件的双峰效应。实验结果表明,与BSIMSOI相比,该文提出的模型误差均方根值(RMS)从6.91%下降至1.91%,同时,利用BSIMSOI的bin参数后,将W较小尺寸的模型RMS值降低了60%以上,可以良好地适用于SOI工艺H型栅PMOS结构建模和电路设计当中。
The H-gate SOI(silicon on insulator)PMOS plays an important role in SOI-technology circuit design because of its strong anti-radiation ability and good symmetry.However,since its transconductance has an obvious bimodal effect,the general BSIMSOI model cannot predict this type of device accurately.Such an effect brings new challenges to the simulation and prediction of device characteristics.To solve this problem,this work establishes a SPICE model of the H-gate PMOS devices by defining two parallel transistor channels in the subcircuits based on the BSIMSOI simulation model.This model can effectively represent the bimodal effect of the transconductance of PMOS devices under the SOI process.Compared with BSIMSOI,the experimental results show the RMS value of the proposed model is reduced from 6.91%to 1.91%.At the same time,after using the bin parameters of BSIMSOI,the RMS value with a smaller size of W is reduced by more than 60%.The proposed model can be used in H-gate PMOS structure modeling and circuit design in the SOI process.
作者
彭宏伟
曹梦玲
黄天
王青松
朱少立
徐大为
PENG Hongwei;CAO Mengling;HUANG Tian;WANG Qingsong;ZHU Shaoli;and XU Dawei(The 58th Research Institute,China Electionics Technology Group Corporation Wuxi Jiangsu 214035)
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
2022年第6期947-952,共6页
Journal of University of Electronic Science and Technology of China
