摘要
针对钴互连化学机械抛光(CMP)高去除速率的要求,提出将不同粒径的SiO_(2)组合作为磨料进行CMP。对比了使用单一粒径与混合粒径SiO_(2)磨料对钴去除速率的影响。结果表明,使用单一粒径磨料时,随着磨料粒径由40 nm增大到130 nm,钴的去除速率先增大后减小,SiO_(2)粒径为100 nm时钴的去除速率最高,达到了447 nm/min。将两种不同粒径的SiO_(2)磨料混合使用能够显著提高钴的去除速率。将粒径为40 nm和100 nm的SiO_(2)磨料按质量比3∶1混合使用时,钴的去除速率最高,达到了563 nm/min,抛光后钴的表面粗糙度(Sq)约为1.05 nm。
Aiming at the requirement of high removal rate for chemical mechanical polishing(CMP)of cobalt interconnects,the SiO_(2) particles with different sizes were used in combination as abrasives.The removal rates of cobalt in CMP using SiO_(2) particles with single size and two different sizes were compared.The results showed that the removal rate of cobalt was increased initially and then decreased with the increasing of particle size of SiO_(2) from 40 nm to 130 nm when CMP using SiO_(2) particles with a single size.The removal rate of cobalt reached its highest value(447 nm/min)when CMP using SiO_(2) particles with a size of 100 nm.The removal rate of cobalt could be increased greatly by combination of SiO_(2) particles with two different sizes as abrasives.The removal rate of cobalt was the highest(ca.563 nm/min)when CMP by mixing SiO_(2) particles 40 nm and 100 nm in size at a mass ratio of 3:1,and the surface roughness(Sq)of the polished cobalt was about 1.05 nm.
作者
郭峰
王胜利
王辰伟
张月
王强
刘光耀
GUO Feng;WANG Shengli;WANG Chenwei;ZHANG Yue;WANG Qiang;LIU Guangyao(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China)
出处
《电镀与涂饰》
CAS
北大核心
2022年第23期1695-1700,共6页
Electroplating & Finishing
基金
河北省自然科学基金(E2019202367)。
关键词
钴
化学机械抛光
二氧化硅
粒径
去除速率
表面粗糙度
cobalt
chemical mechanical polishing
silica
particle size
removal rate
surface roughness
