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光场负离子光电子能谱效应研究 被引量:1

Study on Photoelectron Spectroscopy Effect of Negative Ions in Light Field
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摘要 金属具有良好的塑性、导电导热性以及较高的热膨胀系数,原子之间通过自由电子结合。而金属氧化物脆性较大,具有较为复杂的界面结构,且对制备条件比较敏感。为明确金属界面与其对应氧化物间态密度关系,从激光入射角度和热氧化两个角度出发,研究光场负离子光电子能谱效应。激光入射角度实验中,将电子末态视为自由电子,绘制入射波矢分量能谱图,得出垂直入射时金属Zn的氧化物ZnO的界面能带结构和电子态、非垂直入射时ZnO界面二维能带色散;热氧化实验中,分析Zn附着在SiC表面和被高温退火时,从记录Zn和ZnO在各步骤后的态密度变化和光电子能谱可知,当附着在SiC上金属Zn达到1.0 nm时的能谱,-10.1 eV处出现明显峰值。经多种化学溶液浸泡清洗后,SiC在电子束缚能为-516.8 eV存在一个不明显的O 1 s峰。经800℃退火20 min后,出现了更高的O 1 s峰。由此得出:Zn附着期间样本表面具备金属性、200℃退火后Zn部分转化为ZnO,费米边态密度降低、金属性不明显;800℃退火后,Zn全部转化为ZnO,样本费米边态密度极小,不具有金属性。 Metals have good plasticity,conductivity and thermal conductivity,and high coefficient of thermal expansion.Atoms are bound by free electrons.However,metal oxide is brittle,has complex interface structure and is sensitive to preparation conditions.In order to clarify the relationship between the density of states between the metal interface and its corresponding oxide,the photoelectron spectroscopy effect of negative ions in the light field is studied from the perspectives of laser incidence and thermal oxidation.In the laser incidence angle experiment,the final state of the electron is regarded as a free electron,and the energy spectrum of the incident wave vector component is drawn.The interface energy band structure and electronic state of the oxide ZnO of metal Zn at vertical incidence and the two-dimensional energy band dispersion of the ZnO interface at non vertical incidence are obtained;In the thermal oxidation experiment,when Zn is attached to the SiC surface and annealed at high temperature,the density of States and photoelectron spectroscopy of Zn and ZnO after each step are recorded.It can be seen that there is an obvious peak at-10.1 eV when the metal Zn attached to SiC reaches 1.0 nm.After immersion and cleaning in various chemical solutions,SiC has an indistinct o 1 s peak with an electron binding energy of-516.8 eV.After annealing at 800℃for 20 minutes,a higher o 1 s peak appeared.It can be concluded that the sample surface has metallicity during Zn attachment.After annealing at 200℃,Zn is partially transformed into ZnO,the Fermi edge state density decreases and the metallicity is not obvious.After annealing at 800℃,Zn is completely transformed into ZnO,the Fermi edge state density of the sample is very small and does not have metallicity.
作者 李相敏 熊守丽 LI Xiang-min;XIONG Shou-li(Yangtze University College of Arts and Sciences,Jingzhou 434020,China)
出处 《中国电子科学研究院学报》 北大核心 2022年第9期911-916,共6页 Journal of China Academy of Electronics and Information Technology
基金 湖北省自然科学基金(2019CFC857)。
关键词 中性粒子 光电子能谱 电子态势 原子半径 微型光学器件 neutral particles photoelectron spectroscopy electronic situation atomic radius micro optical device
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