摘要
利用计算机辅助设计(technology computer aided design,TCAD)软件针对N型阱电阻的单粒子效应开展仿真研究,结果表明单个重离子入射到N阱电阻中会造成器件输出电流的扰动.经过对电阻的工作机理和单粒子效应引入的物理机制进行分析,结果表明重离子在N阱电阻中产生的电子-空穴对中和了N阱电阻中的空间电荷区,使得N阱电阻的阻抗瞬间减小、电流增大,且空间电荷区被破坏的面积越大瞬态电流的峰值越高.随着阱结构中的高浓度过剩载流子被收集,单粒子效应的扰动会消失.但N阱电阻独特的长宽比设计导致器件中的过剩载流子收集效率低、单粒子效应对阱电阻的扰动时间长.文中还对影响N阱电阻单粒子效应的其他因素开展了研究,结果表明重离子的线性能量传输(linear energy transfer,LET)值越高、入射位置距离输入电极越远,N阱电阻的单粒子效应越严重.此外,适当缩短N阱电阻的长度、提高阱电阻的输入电压、降低电路电流可以增强其抗单粒子效应表现.
In this paper,the single event effect of N-well resistor is simulated by using the technology computer aided design(TCAD)software.The results indicate that a single heavy ion incident into the N-well resistor will make a disturbance in the output current of the device.The working mechanism of the N-well resistor and the physical mechanism introduced by the single event effect are studied.The results show that ion-induced electron-hole pairs neutralize the depletion region in the N-well substance that provides high impedance for the device,resulting in the instantaneous increase of the output current.The larger the destroyed area of the depletion region in the N-well resistor,the higher the peak value of the transient output current is.But the ion-induced disturbance can disappear with the collection of the high concentration of excess carriers in the N-well structure.However,the unique aspect ratio design of the N-well resistor makes only the carriers close to the input drift to output under the electric field.And,the drift motion of carriers takes a lot of time because of the long transport distance,which leads to low efficiency of collecting excess carriers and a long duration of ion-induced disturbance in the N-well resistor.Besides,some other factors that can affect the single event effect in the N-well resistors are also studied in this paper.The results show that the higher the LET value of ions and the farther the incident location from the input,the more serious the single event effect of N-well resistance is.In addition,properly shortening the length of the N-well resistor and increasing the input voltage of the N-well resistor can enhance its resistance to single event effect.
作者
琚安安
郭红霞
张凤祁
刘晔
钟向丽
欧阳晓平
丁李利
卢超
张鸿
冯亚辉
Ju An-An;Guo Hong-Xia;Zhang Feng-Qi;Liu Ye;Zhong Xiang-Li;Ouyang Xiao-Ping;Ding Li-Li;Lu Chao;Zhang Hong;Feng Ya-Hui(Academic Institution of Material Science and Engineer,Xiangtan University,Xiangtan 411105,China;State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi’an 710024,China)
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2023年第2期209-218,共10页
Acta Physica Sinica
基金
国家自然科学基金(批准号:11875229,51872251)资助的课题。
关键词
阱电阻
空间电荷区
单粒子效应
瞬态电流
N-well resistor
space charge
single event effect
transient currrent
