摘要
二硒化钨(WSe2)是一种具有较高带隙的半导体材料,其结构类似于石墨烯,具有优异的光电特性,在互补逻辑电路、场效应晶体管以及气敏传感器等领域具有潜在的应用价值。本实验采用化学气相沉积法(CVD)实现了大面积、高质量单层WSe2薄膜的制备,利用XPS、AFM、Raman对薄膜进行了表征,探究了基片到钨源的距离和生长温度对样品的形貌、尺寸及形核密度的影响。从晶体生长学的角度,用不同n(W):n(Se)(■0.5,>0.5,=0.5)生长模型解释了不同形貌WSe2薄膜的生长机制,为可调控二维半导体单层薄膜制备工艺的优化提供了参考。
Tungsten diselenide(WSe2)is a semiconductor material with wide band gap,and its structure is similar to that of graphene.It has potential applications in many fields such as complementary logic circuits,field effect transistors and gas sensors,due to the excellent photoelectric characteristics.In this work,large-area and high-quality monolayer WSe2films were prepared by chemical vapor deposition(CVD).The films were characterized by XPS,AFM and Raman.The effects of the distance from substrate to tungsten source and growth temperature on the morphology,size and nucleation density of the samples were investigated.The growth mechanism of WSe2films with different morphologies was interpreted by different n(W)∶n(Se)(■0.5,>0.5,=0.5)from the perspective of crystal growth,which provided a reference for the optimization of the fabrication process of two-dimensional semiconductor monolayer films.
作者
胡冬冬
宋述鹏
刘俊男
毕江元
丁兴
HU Dongdong;SONG Shupeng;LIU Junnan;BI Jiangyuan;DING Xing(State Key Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology,Wuhan 430081,China;College of Material and Metallurgy,Wuhan University of Science and Technology,Wuhan 430081,China)
出处
《材料导报》
EI
CAS
CSCD
北大核心
2023年第2期14-19,共6页
Materials Reports
基金
国家自然科学基金(50901053,51771139)。
关键词
二硒化钨薄膜
化学气相沉积
过渡金属硫属化合物
晶体生长
tungsten diselenide film
chemical vapor deposition
transition metal sulfur compound
crystal growth
