摘要
开展了硅基金属氧化物场效应晶体管用多重场限环型终端结构的优化设计工作。研究了体区注入剂量、场限环宽度、主结宽度对击穿电压的影响规律,并对其机理进行了分析。通过仿真获得了器件内部的电场、电势和碰撞电离率分布。通过逐步优化获得了最终结构和工艺参数,体区注入剂量为1.3×10^(13)cm^(-3),场限环宽度为1.5μm,主结宽度为11μm,对应终端击穿电压为106 V。实验开版流片获得的器件击穿电压为105.6 V,良率达到98.65%。
The optimum design of the multi-field limiting ring termination structure for the silicon-based metal-oxide-semiconductor field-effect transistor is carried out. The influences of the body dose, the field limiting ring width, and the main junction width on the breakdown voltage are studied, and the mechanisms are analyzed. The distributions of electric field, potential and impact ionization rate in the device are obtained by simulation. Through gradual optimization, final structure and process parameters are obtained. The body dose is1.3×10^(13)cm^(-3), field limiting ring width is 1.5 μm, main junction width is 11 μm, and final breakdown voltage is 106 V. The breakdown voltage of the device obtained through the experimental tape-out is 105.6 V, and the yield reaches 98.65%.
作者
卓宁泽
赖信彰
于世珩
ZHUO Ningze;LAI Hsinchang;YU Shiheng(Jiangsu Changjing Electronic Technology Co.,Ltd.,Nanjing 210000,China)
出处
《电子与封装》
2023年第2期79-83,共5页
Electronics & Packaging
基金
江苏省重点研发计划(BE2020010)
江北新区重点研发计划(ZDYF20200107)。
关键词
场限环
终端结构
硅基金属氧化物场效应晶体管
击穿电压
field limiting ring
termination structure
silicon-based metal-oxide-semiconductor field-effect transistor
breakdown voltage
