摘要
作为典型的超宽禁带半导体,氧化镓(Ga_(2)O_(3))逐渐以新型功率器件优选材料的身份成为研究热点。近年来它的亚稳态α相因具有相对最宽的带隙,且与蓝宝石、氮化镓相似的六角晶格而受到关注。研究了α-Ga_(2)O_(3)基肖特基二极管器件,在TCAD仿真结果中发现反向偏置的I-V特性中出现了电流台阶。通过调节可能影响电流台阶的主要因素:漂移区厚度、掺杂浓度和场板结构,发现击穿特性中的电流台阶随着漂移区厚度的增加而变长,但对掺杂浓度变化的依赖性较弱,解释了漂移区在反偏电场作用下的耗尽过程是电流台阶的产生机制。采用分段场板结构可以优化漂移区的电场分布并提高器件击穿电压,器件击穿的最大电场强度超过10 MV/cm。对电流台阶机制的分析结果有助于抑制器件泄漏电流,提高耐压范围。
As a typical ultra-wide band gap semiconductor,gallium oxide(Ga_(2)O_(3))has become a research hotspot as the preferred material for new power devices.Recently,its metastableαphase has attracted attention because of its widest band gap and hexagonal lattice like sapphire and gallium nitride.In this paper,α-Ga_(2)O_(3)-based Schottky diode was modeled,and current steps were found in the reverse bias I-V characteristics in TCAD simulation results.The main factors like drift zone thickness,doping concentration and structure of field plates were adjusted.The results show that the current steps in the breakdown characteristics become longer with the increasing thickness of the drift region,but the dependence on the doping concentration is weak,which explains that the depletion process of the drift region under the action of the reverse bias electric field is the generation mechanism of the current step.By dividing the number of field plates,the electric field distribution was optimized.The maximum electric field of the device breakdown is more than 10 MV/cm.The analysis of the current step mechanism are helpful to suppress the vertical leakage current and improve the voltage withstand range.
作者
盛雨
陈琳
葛雅倩
李思彦
陶志阔
SHENG Yu;CHEN Lin;GE Yaqian;LI Siyan;TAO Zhikuo(School of Electronic and Optical Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China)
出处
《电子元件与材料》
CAS
北大核心
2023年第2期193-199,共7页
Electronic Components And Materials
