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基于Volterra 级数的功率放大器偏置电路优化设计

Bias circuit optimization design of power amplifier based on Volterra series
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摘要 以Volterra级数为理论基础,根据AB类功率放大器的特点,采用混合Π型等效电路对共射放大电路进行建模.对功放中的非线性元件进行具体描述与分析,从而获得放大器电路的系统行为模型.提出一种基于Volterra级数和基尔霍夫电流定律(KCL)的优化设计方法,快速找出最佳偏置参数.设计一个工作频率在850 MHz的射频放大器,并计算出工作在兼顾放大器效率和线性的最佳输入偏置大小为6Ω,此时输出的P1dB为23.4dBm(1 mW为基准功率).Multisim电路仿真证明了理论分析结果. Based on the Volterra series,a hybridΠtype equivalent circuit was used to model the commonemitter amplification circuit according to the characteristics of the Class AB power amplifier.The nonlinear components in the amplifier were described and analyzed to obtain a model of the system behavior of the amplifier circuit.An optimized design method was proposed based on Volterra series and Kirchhoff's current law(KCL)to find the optimal bias parameters quickly.A RF amplifier operating at 850 MHz was designed and the optimal input bias size for operation taking into account both the efficiency and linearity of the amplifier was calculated to be 6 ohms,and the output P1dB was 23.4dBm(the reference power is 1 mW).Multisim circuit simulation proves the results of the theoretical analysis.
作者 柴仁磊 肖曼琳 蔡丽媛 CHAI Renlei;XIAO Manlin;CAI Liyuan(School of Urban Railway Transportation,Shanghai University of Engineering Science,Shanghai 201620,China)
出处 《上海工程技术大学学报》 CAS 2022年第4期378-382,共5页 Journal of Shanghai University of Engineering Science
关键词 共射放大电路 VOLTERRA级数 行为模型 偏置电路 电路仿真 common-emitter amplification circuit Volterra series behavioral model bias circuit circuit simulation
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