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Bi掺杂对溶胶-凝胶法制备Cu_(2)ZnSnS_(4)薄膜性能影响的研究

Effect of Bi Doping on the Properties of Cu_(2)ZnSnS_(4) Thin Films Prepared by Sol-Gel Method
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摘要 Cu_(2)ZnSnS_(4)(CZTS)薄膜太阳电池因其具有较佳带隙、组成元素丰富、理论转换效率高等优点,而被广泛研究。采用溶胶-凝胶法制备了Bi掺杂的CZTS薄膜,研究了Bi掺杂量对薄膜的微观形貌、物相结构和光电性能的影响。研究结果表明,所制备的薄膜为锌黄锡矿结构的CZTS。Bi元素的掺入对薄膜形貌影响很大,晶粒尺寸先增大后减小,薄膜更致密、更均匀。随着Bi掺杂含量增加,CZTS薄膜的光学带隙呈上升趋势,光电流响应先增大后减小。当Bi掺杂浓度为1%时,CZTS薄膜综合性能最佳。 Cu_(2)ZnSnS_(4)(CZTS)thin film solar cells have been widely studied due to its advantages such as optimal band gap,abundant components,and high theoretical conversion efficiency.Bi-doped CZTS thin films are prepared by using sol-gel method.The effects of Bi doping amount on microstructure,phase structure,and optoelectronic properties of thin films are investigated.The results show that the as-prepared thin films are CZTS with kesterite structure.The doping of Bi element has a great influence on the morphology of thin films.The grain size increases at first and then decreases,and the thin films become denser and more uniform.The optical band gap of the CZTS thin films shows an upward trend with the increase of Bi doping content.The photocurrent response first increases and then de-creases.When the doping concentration is 1%,the comprehensive performance of CZTS thin films is the best.
作者 季善银 王威 彭兆泉 王佳文 柏航 孙孪鸿 胡学敏 JI Shanyin;WANG Wei;PENG Zhaoquan;WANG Jiawen;BAI Hang;SUN Luanhong;HU Xuemin(School of Materials Engineering,Jinling Institute of Technology,Nanjing Jiangsu 211169,China;Nanjing key Laboratory of Optometric Materials and Technology,Nanjing Jiangsu 211169,China)
出处 《电子器件》 CAS 北大核心 2023年第1期255-260,共6页 Chinese Journal of Electron Devices
基金 国家自然科学基金(61804069) 江苏省大学生创新训练重点项目(202113573066Y) 金陵科技学院校级科教融合项目(2020KJRH43)。
关键词 Cu_(2)ZnSnS_(4)薄膜 溶胶-凝胶法 Bi掺杂 光电性能 Cu_(2)ZnSnS_(4)thin films Sol-gel method Bi doping optoelectronic properties
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