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基于MEMS技术的三维集成K波段四通道T/R微系统

3D Integrated K-Band Four-Channel T/R Microsystem Based on MEMS Technology
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摘要 为满足有源相控阵雷达小型化需求,基于微电子机械系统(MEMS)多层3D封装技术研制了一种超小尺寸K波段四通道T/R微系统。该器件结合高精度晶圆、微凸点、重布线层(RDL)、硅通孔(TSV)等先进封装技术,将功能芯片和硅片进行纵向堆叠,实现了异质异构的三维集成,具有限幅、低噪声放大、功率放大、5 bit数控衰减、6 bit数控移相、串并转换等功能。器件尺寸仅为10.3 mm×10.3 mm×3.88 mm,质量为1.1 g,体积、质量均减小至传统砖式模块的1/10。实测噪声系数3.29 dB,接收增益19.22 dB,发射输出功率22 dBm,功率一致性优于±0.6 dB。实测结果与仿真结果吻合,为T/R前端的小型化研究提供了参考。 In order to meet the miniaturization requirement of active phased array radar,an ultrasmall K-band four-channel T/R microsystem was developed based on micro-electromechanical system(MEMS)multilayer 3D packaging technology.The device combines advanced packaging technologies such as high-precision wafer,microbump,redistribution layer(RDL)and through silicon via(TSV),and vertically stacks the functional chips and silicon wafers to realize three-dimensional heterogeneous integration.It has the functions of amplitude limiting,low noise amplification,power amplification,5 bit numerical control attenuation,6 bit numerical control phase shift,serial-parallel conversion and so on.The device size is only 10.3 mm×10.3 mm×3.88 mm,the mass is 1.1 g,and the volume and mass are reduced to 1/10 of the traditional brick module.The measured noise figure is 3.29 dB,the received gain is 19.22 dB,the transmitted output power is 22 dBm,and the power consistency is better than±0.6 dB.The measured results are consistent with the simulated results,which provide reference for the miniaturization of T/R front-end.
作者 刘星 夏俊颖 薛梅 李晓林 王嘉 赵宇 Liu Xing;Xia Junying;Xue Mei;Li Xiaolin;Wang Jia;Zhao Yu(The 13th Research Institute,CETC,Shijiazhuang 050051,China;Teaching and Research Guarantee Center,National University of Defense Technology,Changsha 410073,China)
出处 《半导体技术》 CAS 北大核心 2023年第4期335-339,共5页 Semiconductor Technology
关键词 微电子机械系统(MEMS) 三维集成 T/R 微系统 硅通孔(TSV) micro-electromechanical system(MEMS) 3D integration T/R microsystem through silicon via(TSV)
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