摘要
以氯化镉(CdCl_(2)·2.5H_(2)O)、氯化铟(InCl_(3)·4H_(2)O)和硫代乙酰胺(TAA)为原料,利用水热法在FTO导电基底上制备CdIn_(2)S_(4)薄膜材料。利用X射线粉末衍射仪(XRD)、扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)、紫外-可见漫反射光谱(UV-Vis)等手段对所得薄膜的物相结构、表面形貌、成分及光吸收性能等进行表征。借助瞬态表面光电压(TSPV)技术探究CdIn_(2)S_(4)薄膜的光生载流子的分离、传输及复合过程。结果表明:制备的CdIn_(2)S_(4)薄膜结晶良好、表面均匀平整且具有良好的光吸收性能和光电响应。构建了以CdIn_(2)S_(4)和P3HT为吸收层、TiO_(2)为电子传输层的异质结薄膜太阳能电池器件(FTO/TiO_(2)/CdIn_(2)S_(4)/P3HT/Au)。目前其光电转化效率最高为0.022%,光电性能有待进一步提高。
CdIn_(2)S_(4)thin film material was prepared by hydrothermal method on FTO conductive substrate using cadmium chloride(CdCl_(2)·2.5H_(2)O),indium chloride(InCl_(3)·4H_(2)O)and thioacetamide(TAA)as raw materials.The phase structure,surface morphology,composition and optical absorption properties of the obtained films were characterized by X-ray powder diffraction(XRD),scanning electron microscopy(SEM),high-resolution transmission electron microscopy(HRTEM)and UV-Vis diffuse reflectance spectroscopy(UV-Vis).Transient surface photovoltage(TSPV)technology was used to investigate the separation,transport and recombination of photogenerated carriers in CdIn_(2)S_(4)films.The results showed that the CdIn_(2)S_(4)films had good crystallization,uniform surface,good optical absorption performance and photoelectric response.A heterojunction thin-film solar cell device(FTO/TiO_(2)/CdIn_(2)S_(4)/P3HT/Au)with CdIn_(2)S_(4)and P3HT as the absorption layer and TiO_(2)as the electron transport layer was constructed.The highest photoelectric conversion efficiency was 0.022%,and the photoelectric performance needed to be further improved.
作者
李格格
杜文静
贾会敏
郑直
Li Gege;Du Wenjing;Jia Huimin;Zheng Zhi(School of Civil Engineering and Communication,North China University of Water Resources and Electric Power,Zhengzhou 450045;College of Chemical and Materials Engineering,Xuchang University,Xuchang 461000)
出处
《化工新型材料》
CAS
CSCD
北大核心
2023年第3期110-114,126,共6页
New Chemical Materials
基金
国家自然科学基金面上项目(62274141)。
