摘要
基于0.18μm CMOS工艺,设计一种带有高阶补偿结构的低温漂系数带隙基准电路。在传统带隙基准的结构上,利用当三极管的集电极电流工作在不同温度特性下的基极与发射极的电位之差含有的高阶补偿量,对传统结构进行补偿,从而得到一个温度系数极低的带隙基准源。仿真结果表明,所设计电路整体结构简单、易实现,在-55~125℃的温度范围内,温漂系数仅为2.52 ppm/℃,低频时的电源抑制比为-78 dB。
A low temperature drift bandgap voltage reference circuit with high⁃order compensation structure is designed based on 0.18μm CMOS technology.On the basis of the structure of the traditional bandgap reference,the higher⁃order compensation amount containing the voltage difference between the base electrode and the emitter electrode is used to compensate the traditional structure when the collector current of the triode operates at different temperature characteristics,so as to obtain a bandgap reference source with an extremely low temperature coefficient.The simulation results show that the overall structure of the designed circuit is simple and easy to implement;in the temperature range of-55~125℃,its temperature drift coefficient is only 2.52 ppm/℃,and its power rejection ratio at low frequencies is-78 dB.
作者
邓玉清
高宁
DENG Yuqing;GAO Ning(No.58 Research Institute,China Electronics Technology Group Corporation,Wuxi 214035,China)
出处
《现代电子技术》
2023年第10期7-10,共4页
Modern Electronics Technique
关键词
高阶补偿
低温漂
带隙基准源
结构补偿
电路设计
电路仿真
CMOS工艺
high⁃order compensation
low temperature dirft
bandgap voltage reference source
structure compensation
circuit desing
circuit simulation
CMOS technology
