摘要
为了提高InGaAs光电阴极的光电发射性能,探究新型激活工艺,采用Cs/NF_(3)和Cs/O两种激活方式对InGaAs样品进行激活实验。对同一结构的InGaAs阴极样品,分别进行了激活实验、衰减实验、光谱响应测试和表面成分分析,分别从白光光电流、衰减稳定性、光谱响应和表面成分等角度测试并分析了不同激活工艺下阴极的性能参数。通过对比Cs/NF_(3)和Cs/O两种激活方式的实验结果可知:Cs/NF_(3)激活后的InGaAs光电阴极在白光光电流、截止波长和光谱响应方面明显优于Cs/O激活后的样品,光谱响应的增强效果在近红外波段尤为明显,在1064 nm处Cs/NF_(3)激活后阴极光谱响应是Cs/O激活后的4.7倍;然而,与GaAs光电阴极Cs/NF_(3)激活能够获得更高的阴极稳定性这一现象不同,Cs/O激活的InGaAs光电阴极的稳定性明显优于Cs/NF_(3)激活,Cs/NF_(3)激活在截止波长和光谱响应方面的优势在连续光照衰减后消失。
To improve the photoemission performance of the current InGaAs photocathode and explore a new activation recipe,two activation experiments of Cs/NF_(3)and Cs/O were utilized to study the effects of different activation recipes on the performance of the InGaAs photocathode.For InGaAs samples of the same photocathode structure,activation experiments,decay experiments,spectral response measurements,and surface element composition analysis were performed to analyze the relationships between the activation recipes and the characteristics of the photocathode from the perspectives of the white light photocurrent,stability,spectral response,and surface element composition.The experimental results for Cs/NF_(3)and Cs/O activation are as follows.The InGaAs photocathode sample activated by Cs/NF_(3)is significantly better than that activated by Cs/O with regard to the white-light photocurrent,spectral response,and cutoff wavelength,and the enhancement effect of the spectral response is particularly obvious in the near-infrared range.At 1064 nm,the spectral response of the sample activated by Cs/NF_(3)is 4.7 times that of the sample activated by Cs/O.In contrast to the phenomenon that the GaAs photocathode can become more stable through Cs/NF_(3)activation,the stability of the InGaAs sample activated by Cs/O is significantly better than that of the sample activated by Cs/NF_(3).In addition,the advantages of the cutoff wavelength and spectral response induced by Cs/NF_(3)activation are lost after decay.
作者
王自衡
李诗曼
石峰
钱芸生
张益军
WANG Ziheng;LI Shiman;SHI Feng;QIAN Yunsheng;ZHANG Yijun(School of Electronic and Optical Engineering,Nanjing University of Science and Technology,Nanjing 210094,China;National Key Laboratory of Science and Technology on Low-Level-Light,Xi’an 710065,China)
出处
《光学精密工程》
EI
CAS
CSCD
北大核心
2023年第9期1277-1284,共8页
Optics and Precision Engineering
基金
国家自然科学基金资助项目(No.62271259,No.U2141239,No.61771245)
微光夜视技术重点实验室基金资助项目(No.J20200102)。