摘要
集成电路在后摩尔时代的发展呈现出多模式创新的特点。综述了后摩尔时代中一大创新发展热点,即chiplet基3D集成技术与集成微系统的最新进展。综述并分析了当今chiplet基3D集成技术的关键技术的发展现状与趋势,包含3D集成技术、chiplet之间的宽带互连、布局布线与时钟同步、热管理、计算机辅助设计(CAD)等方面的创新。并展现了基于这些关键技术的突破,集成微系统的新进展,包含高性能计算多核处理器、神经网络计算处理器、神经网络加速器、射频微系统和光电微系统的创新。集成微系统已进入智能微系统新发展阶段。
The development of integrated circuit in the post-Moore era presents the characteristics of multi-mode innovation.One of the major innovation development hotspots in the post-Moore era is reviewed,i.e.the recent progress of chiplet-based 3D integration technology and integrated microsystems.The current development status and trends of the key technologies of chiplet-based 3D integration technology are reviewed and analyzed,including the innovations in 3D integration technology,broadband interconnection between chiplets,layout and clock synchronization,thermal management,computer-aided design(CAD)and so on.Based on the breakthrough of these key technologies,the new progress of integrated microsystems is presented,including the innovations of high-performance computing multi-core processors,neural network computing processors,neural network accelerators,radio frequency microsystems and photoelectric microsystems.Integrated microsystems have entered the new development stage of intelligent microsystems.
作者
赵正平
Zhao Zhengping(China Electronics Technology Group Corporation,Beijing 100846,China;National Key Laboratory of Solid-State Microwave Devices and Circuits,Shijiazhuang 050051,China)
出处
《微纳电子技术》
CAS
北大核心
2023年第4期477-495,共19页
Micronanoelectronic Technology
