摘要
当前电磁环境日趋复杂,超宽带、高功率等强电磁技术已经成熟,对信息化装备构成了越来越严重的威胁,限幅器的应用需求越发迫切。文章从半导体限幅器的防护原理及电路结构入手,结合电磁脉冲防护及高功率微波防护的典型应用,详细介绍了电磁防护限幅器的技术路线,对比了Si、GaAs限幅器的特性,指出兼具Si及GaAs限幅器优势的高频、低插损、耐高功率GaN限幅器将是未来电磁防护限幅器的发展趋势。
The current electromagnetic environment is becoming increasingly complex.Furthermore,techniques including ultra wide band(UWB)and high power microwave(HPM)are much mature.Electronic equipment has been under severe threaten.Electromagnetic defense limiters are urgently in need.Starting with the protection principle and circuit structure of semiconductor limiter,and combining with the typical application of electromagnetic pulse protection and high power microwave protection,the technical route of electromagnetic protection limiter is introduced in detail,and the characteristics of Si and GaAs limiters are compared.It is pointed out that the high frequency,low insertion loss and high power GaN limiter with the advantages of both Si and GaAs limiters will be the development trend of electromagnetic protection limiters in the future.
基金
国家重点研发计划资助项目(2022YFB3607600)。
关键词
电磁环境
限幅器
半导体
电磁防护
发展
electromagnetic environment
limiter
semiconductor
electromagnetic defense
development
