摘要
为研究偏压对通过电弧离子沉积法沉积的锆膜性能的影响,并探究锆膜在不同存储条件下的氧化程度,通过调整沉积过程偏压的大小以及占空比制备多组试样,利用扫描电子显微镜、X射线测厚仪、X射线衍射仪以及纳米划痕仪对薄膜的表面形貌、沉积速率、薄膜结构、膜基结合力进行了研究。并利用X射线光电子能谱测试了锆膜在不同存储状态下的氧化程度。结果表明,偏压的增大会提升膜层表面光洁度。但因高能粒子反溅射作用的增强,会降低薄膜的沉积速率。同时,膜基结合力随着偏压的增大有升高的趋势,且膜层的(100)晶面择优趋势会逐渐减小。另外,偏压占空比的增加也会导致沉积速率下降。锆膜表面的氧化层厚度随着时长会逐渐增大,且膜层在大气中暴露一天的氧化程度比真空存储(10^(−5) Pa)半年严重。
In order to study the effect of bias voltage on the properties of zirconium film deposited by arc ion plating and to investigate the oxidation degree of zirconium film under different storage conditions,several groups of samples were prepared by adjusting the bias voltage and duty cycle during the deposition process.Scanning electron microscope(SEM),X-ray thickness gauge,X-ray diffractometer(XRD),and nano-scratch instrument were used to study the surface morphology,deposition rate,structure,and adhesion of the film.The oxidation degree of zirconium film in different storage conditions was tested by X-ray photoelectron spectroscopy(XPS).With the increase of bias voltage,the repulsive force of the workpiece on the large particles with negative charge increases,and the bombardment effect on the large particles deposited on the surface increases,so the surface finish is improved.At the same time,the re-sputtering effect of high-energy particles increases and reduces the deposition rate of the film.In addition,with the increase of deposition energy,the adhesion has a tendency to increase,and the preferred tendency of the(100)crystal planes of the film layer gradually decreases.The increase of the bias duty cycle will also increase the kinetic energy of the target ions when they pass through the sheath,and the enhancement of the re-sputtering effect will reduce the deposition rate.The thickness of the oxide layer of the zirconium film gradually increases with the storage time,and the degree of oxidation in the atmosphere exposed for one day is more serious than that in the vacuum storage(10^(−5) Pa)for half a year.
作者
赵世柯
刘晋允
于文杰
ZHAO Shike;LIU Jinyun;YU Wenjie(Beijing Vacuum Electronics Research Institute,Beijing 100015,China)
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2023年第5期426-431,共6页
Chinese Journal of Vacuum Science and Technology
关键词
电弧离子镀
锆膜
偏压
氧化层
Arc ion plating
Zr film
Bias voltage
Oxide layer
