摘要
本文基于光束传播法(beam propagation method,BPM)和时域有限差分法(finite difference time domain method,FDTD)建立了分析模型,模拟并分析了弯曲脊形波导超辐射发光二极管(superluminescent light emitting diode,SLD)不同结构参数(刻蚀深度、曲率半径、脊形宽度)对波导损耗的影响和倾斜脊形波导不同结构参数(刻蚀深度、脊形宽度、倾斜角度、发射波长)对模式反射率的影响。计算表明,弯曲脊形波导的刻蚀深度和曲率半径是影响波导损耗的重要因素。刻蚀深度较浅使波导对光场的限制作用较弱,过小的曲率半径会使模式传输泄露严重,损耗大大增加。脊形宽度越大,波导损耗越小,其对波导损耗影响较小。脊形波导的端面倾斜角度是抑制模式反射率的重要因素,脊形宽度增加,模式反射率逐渐减小,并在特定的几个角度形成的奇点达到最小值。刻蚀深度对于模式反射率的影响作用较小,但随着刻蚀深度的增加,奇点发生的角度产生了向小角度偏移。在特定的倾斜角度范围内,随着波长减小,奇点的数目会逐渐增加。研究结果可对设计具有优越性能的SLD器件提供参考。
In this paper,an analysis model is established based on the beam propagation method(BPM)and the finite difference time domain method(FDTD).The effects of different structural parameters(etching depth,curvature radius,ridge width)of the curved ridge waveguide superluminescent light emitting diode(SLD)on the waveguide loss and the effects of different structural parameters(etching depth,ridge width,tilt angle,emission wavelength)of the inclined ridge waveguide on the mode reflectivity are simulated and analyzed.Calculations show that the etching depth and curvature radius of the curved ridge waveguide are important factors affecting the waveguide loss.The shallow etching depth makes the waveguide′s confinement effect on the optical field weaker,and the too small curvature radius will cause serious mode transmission leakage and greatly increase the loss.The larger the width of the ridge,the smaller the waveguide loss,which has less influence on the waveguide loss.The inclination angle of the end face of the ridge waveguide is an important factor for suppressing the mode reflectivity.With the increase of the ridge width,the mode reflectivity gradually decreases,and a singularity is formed at certain angles to reach a minimum value.The effect of the etching depth on the mode reflectivity is small,but with the increase of the etching depth,the angle at which the singularity occurs shifts to a small angle.Within a specific tilt angle range,the number of singularities increases gradually as the wavelength decreases.The research results can provide a reference for the design of SLD devices with superior performance.
作者
刘帅男
王芝浩
王警辉
张悦
薄报学
高欣
LIU Shuainan;WANG Zhihao;WANG Jinghui;ZHANG Yue;BO Baoxue;GAO Xin(State Key Laboratory of High Power Semiconductor Laser,School of Physics,Changchun University of Science and Technology,Changchun,Jilin 130022,China)
出处
《光电子．激光》
CAS
CSCD
北大核心
2023年第6期628-635,共8页
Journal of Optoelectronics·Laser
基金
国家自然科学基金(61774024)
吉林省科技发展计划(20190302007GX,20200501008GS)资助项目
