摘要
研究中红外波段激光对CMOS图像传感器的辐照效应,对探索空间态势感知系统光学成像器件的激光干扰和损伤条件具有重要军事意义。开展了不同重频下2.79μm中红外激光对CMOS图像传感器的干扰与损伤实验。观察到CMOS图像传感器的饱和、过饱和以及损伤产生的绿屏、彩色条纹、黑屏、亮线等一系列干扰损伤现象。同时测量了传感器各种辐照现象相对应的2.79μm中红外激光干扰损伤阈值,研究了图像传感器辐照效应与激光重频之间的内在关系,分析了2.79μm中红外激光对CMOS图像传感器的干扰损伤机理。研究表明,CMOS图像传感器的激光损伤主要以材料的热熔融为主,热效应明显。在激光重频10 Hz的辐照下,饱和干扰阈值为0.44 J/cm^(2)、过饱和阈值为0.97 J/cm^(2)、损伤阈值为203.71 J/cm^(2)。研究表明CMOS图像传感器具有很好的抗干扰和抗损伤能力,实验测得的相关阈值数据在空间激光攻防领域具有重要的参考价值。
Objective The CMOS image sensors are widely used in aerospace,security monitoring,industrial control,navigation and guidance,image recognition systems and other fields.Most of researches on laser irradiation effect of CMOS image sensor mainly focus on visible and near infrared bands.With the application of more and more lasers with different wavelengths,there is a great risk of damage to optical systems irradiated by out-of-band lasers,and it is necessary to conduct systematic experimental studies on the interaction between out-of-band lasers and photo detectors.In the photoelectric countermeasure,it is very important to study whether the interference and damage can be effectively caused to the detector when the interference and damage are irradiated by the outof-band laser,and what its mechanism is.The wavelength of 2.79μm mid-infrared laser is in the atmospheric window,which has the characteristics of small air scattering and long propagation distance.This band is also the working band of most reconnaissance satellites,surveillance satellites,early warning satellites and other spacebased systems.In the future space applications,the high-power 2.79μm mid-infrared laser has a broad application prospect.Therefore,it is of great reference value in the laser attack and defense field to study the irradiation effect of mid-infrared laser on CMOS image sensor.Methods In the experiment,the CMOS image sensor irradiated by 2.79μm mid-infrared laser is carried out(Fig.1).The computer is connected to the output signal of CMOS image sensor to observe and record the effect of laser irradiation.In order to study the damage effect of laser irradiation on CMOS image sensor,the experiment is divided into two stages.In the first stage,the laser energy is directly irradiated on the sensor without the sapphire focus lens,and the interference effect of 2.79μm mid-infrared laser on CMOS image sensor is studied.In the second stage,the sapphire focus lens is placed in the optical path to study the damage effect of 2.79μm midinfrared laser on CMOS image sensor.The differential interference contrast(DIC)microscope is used to observe the damage morphology of CMOS sensor samples.Results and Discussions The experimental results of laser interference show that saturation and oversaturation appears on the CMOS image sensor with the increase of laser energy(Fig.3).After stopping laser irradiation for a period of time,CMOS can automatically return to the normal working state.The experimental results show that with the increase of the repetition frequency,CMOS image sensor needs less laser energy and less time to achieve saturation or oversaturation of full screen(Fig.5).The experimental results of laser damage show that the phenomenon of saturation,oversaturation,black screen,green screen and bright line are observed with different laser repetition frequency(Fig.8-9).The damage morphology shows that obvious melting damage occurs in the irradiation area of laser spot,and the high laser energy in the center of beam leads to the ablation and evaporation of a large area of pixel material,and the periphery of the spot area is obviously heated,but no cracks appear(Fig.10).It shows that the damage of 2.79μm mid-infrared laser on CMOS sensor is mainly due to the thermal melting of materials,and the thermal effect is obvious.Conclusions The experimental results indicate that the CMOS image sensor has good anti-interference and antidamage ability.The damage thresholds of CMOS image sensor irradiated by 2.79μm mid-infrared laser at a 10 Hz pulse repetition frequency are 0.44 J/cm^(2)for saturation,0.97 J/cm^(2)for oversaturation,and 203.71 J/cm^(2)for damage,respectively.It can be seen that the damage threshold of the CMOS image sensor is much higher than its interference threshold.The experimental results show that the damage mechanism of CMOS image sensor is mainly melting damage,and the thermal effect is obvious.
作者
王玺
赵楠翔
张永宁
王毕艺
董骁
邹岩
雷武虎
胡以华
Wang Xi;Zhao Nanxiang;Zhang Yongning;Wang Biyi;Dong Xiao;Zou Yan;Lei Wuhu;Hu Yihua(State Key Laboratory of Pulsed Power Laser Technology,Electronic Countermeasure Institute,National University of Defense Technology,Hefei 230037,China;Anhui Laboratory of Advanced Laser Technology,Electronic Countermeasure Institute,National University of Defense Technology,Hefei 230037,China;National Key Laboratory of Electromagnetic Space Security,Tianjin 300308,China;Beijing Institute of Aerospace Control Devices,Beijing 100094,China)
出处
《红外与激光工程》
EI
CSCD
北大核心
2023年第6期386-392,共7页
Infrared and Laser Engineering
基金
国防科技创新特区项目(22TQ2307ZD01001)
国防基础科研计划(JCKY2023230C010)
国防科技大学自主创新科学基金(22-ZZCX-007)
脉冲功率激光技术国家重点实验室基金(SKL2022ZR10)
先进激光技术安徽省实验室基金(AHL2021ZR04)。
