摘要
The effects of ionizing and displacement irradiation of high-energy x-ray and 2-MeV proton on GaN thin films were investigated and compared in this study.The electrical properties of both P-GaN and N-GaN,separated from power devices,were gauged for fundamental analysis.It was found that the electrical properties of P-GaN were improved as a consequence of the disruption of the Mg-H bond induced by high-dose x-ray irradiation,as indicated by the Hall and circular transmission line model.Specifically,under a 100-Mrad(Si)x-ray dose,the specific contact resistance pc of P-GaN decreased by 30%,and the hole carrier concentration increased significantly.Additionally,the atom displacement damage effect of a 2-MeV proton of 1×10^(13)p/cm^(2)led to a significant degradation of the electrical properties of P-GaN,while those of N-GaN remained unchanged.P-GaN was found to be more sensitive to irradiation than N-GaN thin film.The effectiveness of x-ray irradiation in enhancing the electrical properties of P-GaN thin films was demonstrated in this study.
作者
钟傲雪
王磊
唐蕴
杨永涛
王进进
朱慧平
吴真平
唐为华
李博
Aoxue Zhong;Lei Wang;Yun Tang;Yongtao Yang;Jinjin Wang;Huiping Zhu;Zhenping Wu;Weihua Tang;Bo Li(State Key Laboratory of Information Photonics and Optical Communications&School of Science,Beijing University of Posts and Telecommunications,Beijing 100876,China;Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices,Chinese Academy of Sciences,University of Chinese Academy of Sciences,Beijing 100029,China;School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China)
