摘要
逆导型绝缘栅双极型晶体管(reverse conducting insulated gate bipolar transistor,RC-IGBT)是一种新型IGBT器件,其在IGBT芯片结构中集成了一个快恢复二极管,具有成本低、封装工艺简单、功率密度高、抗浪涌电流能力高等特点,因而备受工业界关注,对其可靠性的要求也越来越高。但是,由于RC-IGBT器件特殊的芯片结构,使得其输出特性曲线上具有回跳现象。而回跳现象是否会对RC-IGBT可靠性的考察产生影响还有待研究。因此文中首先深入分析回跳现象产生的机理,并结合考察器件可靠性最重要的实验——功率循环实验的原理阐述,分析得到回跳现象可能会对功率循环中结温测量、并联分流和功率循环寿命及失效形式3个方面产生影响,并通过设计实验进行论证。实验结果表明,回跳现象会对VCE(T)法进行结温测量产生影响,而对VF(T)法进行结温测量没有影响;通过并联分流实验发现,具有较小回跳电压的器件会在电流流过器件瞬间分得更多的电流,但是其影响时间较短;通过不同导通模式下的功率循环实验对比分析可知,回跳现象对分立器件的功率循环寿命及失效方式没有影响。
A reverse conducting insulated gate bipolar transistor(RC-IGBT)is a new type of IGBT device,integrated with a fast recovery diode(FRD),which has received widespread attention from the industry due to its low cost,simple packaging process,high power density,and high surge current capability,and the requirements for its reliability are increasing.However,due to the special chip structure of the RC-IGBT,the output characteristic curve has a snap-back phenomenon.It is necessary to investigate the influence of the snap-back phenomenon on the reliability of the RC-IGBT device.Therefore,this paper first analyses the mechanism of the snap-back phenomenon,combining with the principles of the power cycling test(PCT),which is the most important test to investigate the device reliability.It is found that the junction temperature measurement,current distribution in parallel,the lifetime of the PCT and the failure modes will be affected by the snap-back phenomenon.Then,some experiments are designed to verify the result.The experimental results show that the snap-back phenomenon would affect the junction temperature measurement with the VCE(T)method,but has no effect on the junction temperature measurement with the VF(T)method.The current distribution in parallel experiment shows that the device with a smaller Vsb will obtain more current at the total current through the devices instantaneously,but the impact time is shorter.Finally,through the comparative analysis of PCT results under different conduction modes,it is found that the snap-back phenomenon has no effect on the lifetime and failure mode of the device.
作者
谢露红
赵雨山
邓二平
张莹
王哨
黄永章
XIE Luhong;ZHAO Yushan;DENG Erping;ZHANG Ying;WANG Shao;HUANG Yongzhang(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(North China Electric Power University),Changping District,Beijing 102206,China;State Grid Zhejiang Longgang Electric Power Supply Corporation,Longgang 325802,Zhejiang Province,China)
出处
《中国电机工程学报》
EI
CSCD
北大核心
2023年第14期5607-5618,共12页
Proceedings of the CSEE
关键词
逆导型绝缘栅双极型晶体管
回跳现象
结温测量
并联分流
功率循环测试
reverse conducting insulated gate bipolar transistor(RC-IGBT)
snap-back phenomenon
junction temperature measurement
current distribution in parallel
power cycling test
