摘要
在先进工艺集成电路中,高能中子、热中子和α粒子造成的软错误愈发受到关注。研究了150nm至16nmFinFET工艺节点器件在大气环境中的单粒子效应。随着工艺节点的缩小,高能中子引起的单粒子翻转截面和软错误率整体上均呈下降趋势。高能中子引起的软错误率在各个节点中均占据主导地位。热中子在45nm工艺节点下对软错误率有明显贡献,由其与W塞中所包含的10B核反应引起。α粒子在先进器件中的贡献整体出现下降趋势,在40nm工艺节点下出现极小值。此外,16nm工艺节点下FinFET结构的引入使集成电路的软错误率下降了一个数量级。
In advanced process integrated circuits,soft errors caused by high-energy neutrons,thermal neutrons andαparticles are gaining increasing attention.Single event effects of 150 nm to 16 nm FinFET process node devices in atmospheric environments are investigated.The single event upset cross section and soft error rate caused by high-energy neutrons both decrease with the shrinkage of the process node.The soft error rate caused by high-energy neutrons dominates in each node.Thermal neutrons contribute significantly to the soft error rate at the 45 nm process node due to its nuclear reaction with'oB in W plug.The contribution ofαparticles in advanced devices shows an overall downward trend,with minimal values at 40 nm process node.In addition,the introduction of the FinFET structure at 16 nm process node reduces the soft error rate of the integrated circuit by an order of magnitude.
作者
余淇睿
张战刚
李斌
吴朝晖
雷志锋
彭超
YU Qirui;ZHANG Zhan’gang;LI Bin;WU Zhaohui;LEI Zhifeng;PENG Chao(State Key Laboratory of Reliability Physics and Application Technology of Electronic Components,China Electronic Product Reliability and Environmental Testing Research Institute,Guangzhou 511370,China;School of Microelectronics,South China University of Technology,Guangzhou 511442,China)
出处
《电子与封装》
2023年第8期70-76,共7页
Electronics & Packaging
基金
国家自然科学基金(12175045,12075065)
电子元器件可靠性物理及其应用技术国家级重点实验室开放基金(ZHD202106)。
